QUASI-MATCHED-VELOCITY TRAVELING-WAVE-TYPE ELECTRODES FOR LIGHT MODULATORS AND THEIR ANALYSIS.

Minoru Sanagi, Masamitsu Nakajima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To increase the bandwidth of the traveling-wave-type light modulator, it is necessary to decrease the difference between the velocity of the modulation wave and that of light. The velocity mismatch was improved by incorporating a buffer material with low dielectric constant between the electrodes and substrate so that the modulation efficiency does not deteriorate and the capacitance between the electrodes is minimized. Considering not only the bandwidth but also the ratio between the driving power and the bandwidth (P/ DELTA f), three types of structures have been proposed.

Original languageEnglish
Pages (from-to)80-86
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume70
Issue number8
Publication statusPublished - Aug 1987
Externally publishedYes

Fingerprint

Light modulators
light modulators
traveling waves
bandwidth
Bandwidth
Electrodes
electrodes
Modulation
modulation
Permittivity
Capacitance
buffers
capacitance
permittivity
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

@article{aaafc0d6e3c043838fe1dcf14eedf08a,
title = "QUASI-MATCHED-VELOCITY TRAVELING-WAVE-TYPE ELECTRODES FOR LIGHT MODULATORS AND THEIR ANALYSIS.",
abstract = "To increase the bandwidth of the traveling-wave-type light modulator, it is necessary to decrease the difference between the velocity of the modulation wave and that of light. The velocity mismatch was improved by incorporating a buffer material with low dielectric constant between the electrodes and substrate so that the modulation efficiency does not deteriorate and the capacitance between the electrodes is minimized. Considering not only the bandwidth but also the ratio between the driving power and the bandwidth (P/ DELTA f), three types of structures have been proposed.",
author = "Minoru Sanagi and Masamitsu Nakajima",
year = "1987",
month = "8",
language = "English",
volume = "70",
pages = "80--86",
journal = "Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)",
issn = "8756-663X",
publisher = "Scripta Technica",
number = "8",

}

TY - JOUR

T1 - QUASI-MATCHED-VELOCITY TRAVELING-WAVE-TYPE ELECTRODES FOR LIGHT MODULATORS AND THEIR ANALYSIS.

AU - Sanagi, Minoru

AU - Nakajima, Masamitsu

PY - 1987/8

Y1 - 1987/8

N2 - To increase the bandwidth of the traveling-wave-type light modulator, it is necessary to decrease the difference between the velocity of the modulation wave and that of light. The velocity mismatch was improved by incorporating a buffer material with low dielectric constant between the electrodes and substrate so that the modulation efficiency does not deteriorate and the capacitance between the electrodes is minimized. Considering not only the bandwidth but also the ratio between the driving power and the bandwidth (P/ DELTA f), three types of structures have been proposed.

AB - To increase the bandwidth of the traveling-wave-type light modulator, it is necessary to decrease the difference between the velocity of the modulation wave and that of light. The velocity mismatch was improved by incorporating a buffer material with low dielectric constant between the electrodes and substrate so that the modulation efficiency does not deteriorate and the capacitance between the electrodes is minimized. Considering not only the bandwidth but also the ratio between the driving power and the bandwidth (P/ DELTA f), three types of structures have been proposed.

UR - http://www.scopus.com/inward/record.url?scp=0023389506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023389506&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0023389506

VL - 70

SP - 80

EP - 86

JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

SN - 8756-663X

IS - 8

ER -