TY - JOUR
T1 - Quantum Hall states observed in thin films of Dirac semimetal Cd3As2
AU - Uchida, Masaki
AU - Nakazawa, Yusuke
AU - Nishihaya, Shinichi
AU - Akiba, Kazuto
AU - Kriener, Markus
AU - Kozuka, Yusuke
AU - Miyake, Atsushi
AU - Taguchi, Yasujiro
AU - Tokunaga, Masashi
AU - Nagaosa, Naoto
AU - Tokura, Yoshinori
AU - Kawasaki, Masashi
N1 - Funding Information:
We acknowledge fruitful discussions with R. Arita, T. Koretsune, S. Nakosai, R. Yoshimi, M. Kawamura, K. Muraki, K. Ishizaka, M. Hirschberger, and T. Liang. We also thank M. Tanaka, S. Ohya, and A. Kikkawa for technical advice about the handling of arsenides. This work was supported by JST CREST Grant No. JPMJCR16F1, Japan and by Grant-in-Aids for Scientific Research (S) No. JP24226002, Scientific Research (C) No. JP15K05140, Young Scientists (A) No. JP15H05425, and Scientific Research on Innovative Areas “Topological Materials Science” No. JP16H00980 from MEXT, Japan.
Publisher Copyright:
© 2017 The Author(s).
PY - 2017/12/1
Y1 - 2017/12/1
N2 - A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.
AB - A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases.
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U2 - 10.1038/s41467-017-02423-1
DO - 10.1038/s41467-017-02423-1
M3 - Article
C2 - 29273770
AN - SCOPUS:85039154412
VL - 8
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
IS - 1
M1 - 2274
ER -