Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors

Xuesong Lee; Yasuyuki Sugawara; Akio Ito; Shuhei Oikawa; Naoko Kawasaki; Yumiko Kaji; Ryoji Mitsuhashi; Hideki Okamoto; Akihiko Fujiwara; Kenji Omote; Takashi Kambe; Naoshi Ikeda; Yoshihiro Kubozono

doi:10.1016/j.orgel.2010.06.003

Quantitative analysis of O₂ gas sensing characteristics of picene thin film field-effect transistors

Xuesong Lee, Yasuyuki Sugawara, Akio Ito, Shuhei Oikawa, Naoko Kawasaki, Yumiko Kaji, Ryoji Mitsuhashi, Hideki Okamoto, Akihiko Fujiwara, Kenji Omote, Takashi Kambe, Naoshi Ikeda, Yoshihiro Kubozono

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

O₂ gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO₂ gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO₂. The picene FETs show very sensitive O₂ gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (V_G) dependent mobility induced by O₂ exposure, i.e., the suppression of drain current at high V_G.

Original language	English
Pages (from-to)	1394-1398
Number of pages	5
Journal	Organic Electronics
Volume	11
Issue number	8
DOIs	https://doi.org/10.1016/j.orgel.2010.06.003
Publication status	Published - Aug 2010

Keywords

Hysteresis
Mobility reduction factor
Organic thin film transistor
Picene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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Quantitative analysis of O₂ gas sensing characteristics of picene thin film field-effect transistors. / Lee, Xuesong; Sugawara, Yasuyuki; Ito, Akio; Oikawa, Shuhei; Kawasaki, Naoko; Kaji, Yumiko; Mitsuhashi, Ryoji; Okamoto, Hideki; Fujiwara, Akihiko; Omote, Kenji; Kambe, Takashi ; Ikeda, Naoshi ; Kubozono, Yoshihiro.

In: Organic Electronics, Vol. 11, No. 8, 08.2010, p. 1394-1398.

Research output: Contribution to journal › Article › peer-review

Lee, Xuesong ; Sugawara, Yasuyuki ; Ito, Akio ; Oikawa, Shuhei ; Kawasaki, Naoko ; Kaji, Yumiko ; Mitsuhashi, Ryoji ; Okamoto, Hideki ; Fujiwara, Akihiko ; Omote, Kenji ; Kambe, Takashi ; Ikeda, Naoshi ; Kubozono, Yoshihiro. / Quantitative analysis of O₂ gas sensing characteristics of picene thin film field-effect transistors. In: Organic Electronics. 2010 ; Vol. 11, No. 8. pp. 1394-1398.

@article{a9702922c59e4fe79d3eb2dea160fef2,

title = "Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors",

abstract = "O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop{\texttrademark} or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.",

keywords = "Hysteresis, Mobility reduction factor, Organic thin film transistor, Picene",

author = "Xuesong Lee and Yasuyuki Sugawara and Akio Ito and Shuhei Oikawa and Naoko Kawasaki and Yumiko Kaji and Ryoji Mitsuhashi and Hideki Okamoto and Akihiko Fujiwara and Kenji Omote and Takashi Kambe and Naoshi Ikeda and Yoshihiro Kubozono",

note = "Funding Information: This work was partly supported by a Grant-in-Aid (18340104 and 20045012) from MEXT, Japan, by the Japan Science and Technology Agency, and by the Support Unit for Strategic Programs of Okayama University. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "2010",

month = aug,

doi = "10.1016/j.orgel.2010.06.003",

language = "English",

volume = "11",

pages = "1394--1398",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

number = "8",

}

TY - JOUR

T1 - Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors

AU - Lee, Xuesong

AU - Sugawara, Yasuyuki

AU - Ito, Akio

AU - Oikawa, Shuhei

AU - Kawasaki, Naoko

AU - Kaji, Yumiko

AU - Mitsuhashi, Ryoji

AU - Okamoto, Hideki

AU - Fujiwara, Akihiko

AU - Omote, Kenji

AU - Kambe, Takashi

AU - Ikeda, Naoshi

AU - Kubozono, Yoshihiro

N1 - Funding Information: This work was partly supported by a Grant-in-Aid (18340104 and 20045012) from MEXT, Japan, by the Japan Science and Technology Agency, and by the Support Unit for Strategic Programs of Okayama University. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2010/8

Y1 - 2010/8

N2 - O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.

AB - O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.

KW - Hysteresis

KW - Mobility reduction factor

KW - Organic thin film transistor

KW - Picene

UR - http://www.scopus.com/inward/record.url?scp=77954048545&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954048545&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2010.06.003

DO - 10.1016/j.orgel.2010.06.003

M3 - Article

AN - SCOPUS:77954048545

VL - 11

SP - 1394

EP - 1398

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 8

ER -