Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors

Xuesong Lee, Yasuyuki Sugawara, Akio Ito, Shuhei Oikawa, Naoko Kawasaki, Yumiko Kaji, Ryoji Mitsuhashi, Hideki Okamoto, Akihiko Fujiwara, Kenji Omote, Takashi Kambe, Naoshi Ikeda, Yoshihiro Kubozono

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.

Original languageEnglish
Pages (from-to)1394-1398
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Volume11
Issue number8
DOIs
Publication statusPublished - Aug 2010

Fingerprint

Thin film transistors
Field effect transistors
quantitative analysis
field effect transistors
Gases
thin films
Chemical analysis
gases
Gate dielectrics
Drain current
Polystyrenes
Electric potential
Hysteresis
high voltages
polystyrene
Polymers
hysteresis
retarding
picene
polymers

Keywords

  • Hysteresis
  • Mobility reduction factor
  • O sensor
  • Organic thin film transistor
  • Picene

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors. / Lee, Xuesong; Sugawara, Yasuyuki; Ito, Akio; Oikawa, Shuhei; Kawasaki, Naoko; Kaji, Yumiko; Mitsuhashi, Ryoji; Okamoto, Hideki; Fujiwara, Akihiko; Omote, Kenji; Kambe, Takashi; Ikeda, Naoshi; Kubozono, Yoshihiro.

In: Organic Electronics: physics, materials, applications, Vol. 11, No. 8, 08.2010, p. 1394-1398.

Research output: Contribution to journalArticle

Lee, Xuesong ; Sugawara, Yasuyuki ; Ito, Akio ; Oikawa, Shuhei ; Kawasaki, Naoko ; Kaji, Yumiko ; Mitsuhashi, Ryoji ; Okamoto, Hideki ; Fujiwara, Akihiko ; Omote, Kenji ; Kambe, Takashi ; Ikeda, Naoshi ; Kubozono, Yoshihiro. / Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors. In: Organic Electronics: physics, materials, applications. 2010 ; Vol. 11, No. 8. pp. 1394-1398.
@article{a9702922c59e4fe79d3eb2dea160fef2,
title = "Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors",
abstract = "O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.",
keywords = "Hysteresis, Mobility reduction factor, O sensor, Organic thin film transistor, Picene",
author = "Xuesong Lee and Yasuyuki Sugawara and Akio Ito and Shuhei Oikawa and Naoko Kawasaki and Yumiko Kaji and Ryoji Mitsuhashi and Hideki Okamoto and Akihiko Fujiwara and Kenji Omote and Takashi Kambe and Naoshi Ikeda and Yoshihiro Kubozono",
year = "2010",
month = "8",
doi = "10.1016/j.orgel.2010.06.003",
language = "English",
volume = "11",
pages = "1394--1398",
journal = "Organic Electronics",
issn = "1566-1199",
publisher = "Elsevier",
number = "8",

}

TY - JOUR

T1 - Quantitative analysis of O2 gas sensing characteristics of picene thin film field-effect transistors

AU - Lee, Xuesong

AU - Sugawara, Yasuyuki

AU - Ito, Akio

AU - Oikawa, Shuhei

AU - Kawasaki, Naoko

AU - Kaji, Yumiko

AU - Mitsuhashi, Ryoji

AU - Okamoto, Hideki

AU - Fujiwara, Akihiko

AU - Omote, Kenji

AU - Kambe, Takashi

AU - Ikeda, Naoshi

AU - Kubozono, Yoshihiro

PY - 2010/8

Y1 - 2010/8

N2 - O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.

AB - O2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop™ or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane- coated SiO2. The picene FETs show very sensitive O2 gas sensing effects down to ∼10 ppm. A quantitative analysis is presented of the gate voltage (VG) dependent mobility induced by O2 exposure, i.e., the suppression of drain current at high VG.

KW - Hysteresis

KW - Mobility reduction factor

KW - O sensor

KW - Organic thin film transistor

KW - Picene

UR - http://www.scopus.com/inward/record.url?scp=77954048545&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954048545&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2010.06.003

DO - 10.1016/j.orgel.2010.06.003

M3 - Article

AN - SCOPUS:77954048545

VL - 11

SP - 1394

EP - 1398

JO - Organic Electronics

JF - Organic Electronics

SN - 1566-1199

IS - 8

ER -