Purification of metallurgical grade silicon to solar grade for use in solar cell wafers

Yoshiei Katou, Kazuhiro Hanazawa, Hiroyuki Baba, Naomichi Nakamura, Noriyoshi Yuge, Yasuhiko Sakaguchi, Shoichi Hiwasa, Fukuo Aratani

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A pyrometallurgical process for manufacturing solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si) was developed. Metallic elements in MG-Si such as iron, titanium and aluminum, which show low partition coefficients, were removed by directional solidification practice. Phosphorus removal was carried out by evaporation for high vapor pressure, and boron was changed to boron oxide effectively by water vapor addition, because partition coefficients of phosphorus and boron are close to unity. To satisfy the impurity specification of SOG-Si, each purification process was combined as follows: (first process) dephosphorization by electron beam melting-first step directional solidification - (second process) oxidation of boron and carbon during plasma practice - deoxidation - second step directional solidification. MG-Si (purity level; 99 mass%) was successfully purified to the solar grade impurity level, that is, 6N (99.9999 mass%) except carbon and oxygen elements, by 20 kg scale and 150-300 kg scale equipments. The manufactured ingot was directly sliced to wafers and prepared to solar cells of multicrystalline silicon through the NEDO standard cell production process. The maximum conversion efficiency of solar cells attained to above 14%, which is almost equal to that of solar cells on the market.

Original languageEnglish
Pages (from-to)717-724
Number of pages8
JournalTetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan
Volume86
Issue number11
Publication statusPublished - Nov 2000
Externally publishedYes

Fingerprint

Silicon
purification
Purification
grade
Solar cells
solar cells
wafers
Boron
silicon
Solidification
boron
Phosphorus
phosphorus
partitions
Carbon
Electron beam melting
Impurities
boron oxides
impurities
carbon

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Katou, Y., Hanazawa, K., Baba, H., Nakamura, N., Yuge, N., Sakaguchi, Y., ... Aratani, F. (2000). Purification of metallurgical grade silicon to solar grade for use in solar cell wafers. Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan, 86(11), 717-724.

Purification of metallurgical grade silicon to solar grade for use in solar cell wafers. / Katou, Yoshiei; Hanazawa, Kazuhiro; Baba, Hiroyuki; Nakamura, Naomichi; Yuge, Noriyoshi; Sakaguchi, Yasuhiko; Hiwasa, Shoichi; Aratani, Fukuo.

In: Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan, Vol. 86, No. 11, 11.2000, p. 717-724.

Research output: Contribution to journalArticle

Katou, Y, Hanazawa, K, Baba, H, Nakamura, N, Yuge, N, Sakaguchi, Y, Hiwasa, S & Aratani, F 2000, 'Purification of metallurgical grade silicon to solar grade for use in solar cell wafers', Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan, vol. 86, no. 11, pp. 717-724.
Katou, Yoshiei ; Hanazawa, Kazuhiro ; Baba, Hiroyuki ; Nakamura, Naomichi ; Yuge, Noriyoshi ; Sakaguchi, Yasuhiko ; Hiwasa, Shoichi ; Aratani, Fukuo. / Purification of metallurgical grade silicon to solar grade for use in solar cell wafers. In: Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan. 2000 ; Vol. 86, No. 11. pp. 717-724.
@article{f9968746f7a24afaa1521218f2e49534,
title = "Purification of metallurgical grade silicon to solar grade for use in solar cell wafers",
abstract = "A pyrometallurgical process for manufacturing solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si) was developed. Metallic elements in MG-Si such as iron, titanium and aluminum, which show low partition coefficients, were removed by directional solidification practice. Phosphorus removal was carried out by evaporation for high vapor pressure, and boron was changed to boron oxide effectively by water vapor addition, because partition coefficients of phosphorus and boron are close to unity. To satisfy the impurity specification of SOG-Si, each purification process was combined as follows: (first process) dephosphorization by electron beam melting-first step directional solidification - (second process) oxidation of boron and carbon during plasma practice - deoxidation - second step directional solidification. MG-Si (purity level; 99 mass{\%}) was successfully purified to the solar grade impurity level, that is, 6N (99.9999 mass{\%}) except carbon and oxygen elements, by 20 kg scale and 150-300 kg scale equipments. The manufactured ingot was directly sliced to wafers and prepared to solar cells of multicrystalline silicon through the NEDO standard cell production process. The maximum conversion efficiency of solar cells attained to above 14{\%}, which is almost equal to that of solar cells on the market.",
author = "Yoshiei Katou and Kazuhiro Hanazawa and Hiroyuki Baba and Naomichi Nakamura and Noriyoshi Yuge and Yasuhiko Sakaguchi and Shoichi Hiwasa and Fukuo Aratani",
year = "2000",
month = "11",
language = "English",
volume = "86",
pages = "717--724",
journal = "Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan",
issn = "0021-1575",
publisher = "Iron and Steel Institute of Japan",
number = "11",

}

TY - JOUR

T1 - Purification of metallurgical grade silicon to solar grade for use in solar cell wafers

AU - Katou, Yoshiei

AU - Hanazawa, Kazuhiro

AU - Baba, Hiroyuki

AU - Nakamura, Naomichi

AU - Yuge, Noriyoshi

AU - Sakaguchi, Yasuhiko

AU - Hiwasa, Shoichi

AU - Aratani, Fukuo

PY - 2000/11

Y1 - 2000/11

N2 - A pyrometallurgical process for manufacturing solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si) was developed. Metallic elements in MG-Si such as iron, titanium and aluminum, which show low partition coefficients, were removed by directional solidification practice. Phosphorus removal was carried out by evaporation for high vapor pressure, and boron was changed to boron oxide effectively by water vapor addition, because partition coefficients of phosphorus and boron are close to unity. To satisfy the impurity specification of SOG-Si, each purification process was combined as follows: (first process) dephosphorization by electron beam melting-first step directional solidification - (second process) oxidation of boron and carbon during plasma practice - deoxidation - second step directional solidification. MG-Si (purity level; 99 mass%) was successfully purified to the solar grade impurity level, that is, 6N (99.9999 mass%) except carbon and oxygen elements, by 20 kg scale and 150-300 kg scale equipments. The manufactured ingot was directly sliced to wafers and prepared to solar cells of multicrystalline silicon through the NEDO standard cell production process. The maximum conversion efficiency of solar cells attained to above 14%, which is almost equal to that of solar cells on the market.

AB - A pyrometallurgical process for manufacturing solar grade silicon (SOG-Si) from metallurgical grade silicon (MG-Si) was developed. Metallic elements in MG-Si such as iron, titanium and aluminum, which show low partition coefficients, were removed by directional solidification practice. Phosphorus removal was carried out by evaporation for high vapor pressure, and boron was changed to boron oxide effectively by water vapor addition, because partition coefficients of phosphorus and boron are close to unity. To satisfy the impurity specification of SOG-Si, each purification process was combined as follows: (first process) dephosphorization by electron beam melting-first step directional solidification - (second process) oxidation of boron and carbon during plasma practice - deoxidation - second step directional solidification. MG-Si (purity level; 99 mass%) was successfully purified to the solar grade impurity level, that is, 6N (99.9999 mass%) except carbon and oxygen elements, by 20 kg scale and 150-300 kg scale equipments. The manufactured ingot was directly sliced to wafers and prepared to solar cells of multicrystalline silicon through the NEDO standard cell production process. The maximum conversion efficiency of solar cells attained to above 14%, which is almost equal to that of solar cells on the market.

UR - http://www.scopus.com/inward/record.url?scp=0034317857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034317857&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034317857

VL - 86

SP - 717

EP - 724

JO - Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan

JF - Tetsu-To-Hagane/Journal of the Iron and Steel Institute of Japan

SN - 0021-1575

IS - 11

ER -