Pseudogap formation in Kondo insulators CeRhSb and CeRhAs studied by ultrahigh-resolution photoemission spectroscopy

H. Kumigashira, T. Sato, Takayoshi Yokoya, T. Takahashi, S. Yoshii, M. Kasaya

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report an ultrahigh-resolution (ΔE to approximately 8 meV) temperature-dependent photoemission spectroscopy on the Kondo insulators CeRhAs and CeRhSb. We have observed a pseudogap at the Fermi level at low temperature for both compounds, which is gradually filled-in with increasing temperature. We found that the size of pseudogap is well scaled with the Kondo temperature (TK) while the temperature evolution is dominated by another characteristic temperature much lower than TK.

Original languageEnglish
Pages (from-to)284-285
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - Jun 1 2000
Externally publishedYes

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Photoelectron spectroscopy
photoelectric emission
insulators
spectroscopy
Temperature
temperature
Fermi level

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Pseudogap formation in Kondo insulators CeRhSb and CeRhAs studied by ultrahigh-resolution photoemission spectroscopy. / Kumigashira, H.; Sato, T.; Yokoya, Takayoshi; Takahashi, T.; Yoshii, S.; Kasaya, M.

In: Physica B: Condensed Matter, Vol. 281-282, 01.06.2000, p. 284-285.

Research output: Contribution to journalArticle

Kumigashira, H. ; Sato, T. ; Yokoya, Takayoshi ; Takahashi, T. ; Yoshii, S. ; Kasaya, M. / Pseudogap formation in Kondo insulators CeRhSb and CeRhAs studied by ultrahigh-resolution photoemission spectroscopy. In: Physica B: Condensed Matter. 2000 ; Vol. 281-282. pp. 284-285.
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AU - Kasaya, M.

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