Proton-implantation-induced optical phenomena in SiO2: GeO2 glasses: Formation of photosensitive defects and nanometer sized Ge crystals

Ken Ichi Kawamura, Yoshikazu Kameshima, Hideo Hosono, Hiroshi Kawazoe

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ion implantation of 1.5 MeV protons to 1GeO2-9SiO2 glasses induces interesting phenomena. For a fluence 1 × 1017 cm-2, oxygen-deficient type point defects associated with Ge ions were primarily formed, and for fluences > 5 × 1017 cm-2 the formation of Ge fine crystalline particles was observed. Nanometer-sized crystalline Ge colloid particles were formed by implantation of protons at 1.5 MeV without post-thermal annealing. The depth of colloid formation layers from the implanted surface agreed with the peak region of electronic energy deposition. No formation of Ge colloids and the Ge related oxygen point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1 × 1018 cm-2. A tentative mechanism for the Ge nanocrystal formation is proposed.

Original languageEnglish
Pages (from-to)18-23
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
VolumeB54
Issue number1-2
Publication statusPublished - Jun 12 1998
Externally publishedYes

Fingerprint

Colloids
Ion implantation
Protons
implantation
Point defects
colloids
Glass
Defects
fluence
Crystals
Particles (particulate matter)
protons
glass
defects
point defects
Oxygen
Crystalline materials
crystals
Nanocrystals
oxygen

Keywords

  • Photosensitive defects
  • Proton-implanation
  • SiO:GeO glasses

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "Ion implantation of 1.5 MeV protons to 1GeO2-9SiO2 glasses induces interesting phenomena. For a fluence 1 × 1017 cm-2, oxygen-deficient type point defects associated with Ge ions were primarily formed, and for fluences > 5 × 1017 cm-2 the formation of Ge fine crystalline particles was observed. Nanometer-sized crystalline Ge colloid particles were formed by implantation of protons at 1.5 MeV without post-thermal annealing. The depth of colloid formation layers from the implanted surface agreed with the peak region of electronic energy deposition. No formation of Ge colloids and the Ge related oxygen point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1 × 1018 cm-2. A tentative mechanism for the Ge nanocrystal formation is proposed.",
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T1 - Proton-implantation-induced optical phenomena in SiO2

T2 - GeO2 glasses: Formation of photosensitive defects and nanometer sized Ge crystals

AU - Kawamura, Ken Ichi

AU - Kameshima, Yoshikazu

AU - Hosono, Hideo

AU - Kawazoe, Hiroshi

PY - 1998/6/12

Y1 - 1998/6/12

N2 - Ion implantation of 1.5 MeV protons to 1GeO2-9SiO2 glasses induces interesting phenomena. For a fluence 1 × 1017 cm-2, oxygen-deficient type point defects associated with Ge ions were primarily formed, and for fluences > 5 × 1017 cm-2 the formation of Ge fine crystalline particles was observed. Nanometer-sized crystalline Ge colloid particles were formed by implantation of protons at 1.5 MeV without post-thermal annealing. The depth of colloid formation layers from the implanted surface agreed with the peak region of electronic energy deposition. No formation of Ge colloids and the Ge related oxygen point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1 × 1018 cm-2. A tentative mechanism for the Ge nanocrystal formation is proposed.

AB - Ion implantation of 1.5 MeV protons to 1GeO2-9SiO2 glasses induces interesting phenomena. For a fluence 1 × 1017 cm-2, oxygen-deficient type point defects associated with Ge ions were primarily formed, and for fluences > 5 × 1017 cm-2 the formation of Ge fine crystalline particles was observed. Nanometer-sized crystalline Ge colloid particles were formed by implantation of protons at 1.5 MeV without post-thermal annealing. The depth of colloid formation layers from the implanted surface agreed with the peak region of electronic energy deposition. No formation of Ge colloids and the Ge related oxygen point defects were noted for implantation of 1.5 MeV He+ to a fluence of 1 × 1018 cm-2. A tentative mechanism for the Ge nanocrystal formation is proposed.

KW - Photosensitive defects

KW - Proton-implanation

KW - SiO:GeO glasses

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