The structural and electrical properties of N-H complexes in GaAsN grown by chemical beam epitaxy are summarized. Using local vibration mode spectroscopy, some of the vibration frequencies are shown to be the same as those in the material grown by liquid encapsulated Czochralski and metal organic chemical vapor deposition, while no vibration modes are common to those in the material grown by molecular beam epitaxy. The dependencies of the vibration frequencies on measurement temperatures and annealing temperatures, and polarization of the vibration directions are studied to understand the structural properties of N-H complexes. The As source flow rate affects ratios of the defect densities, which indicate that those defects have different formation processes. The charge excitations by irradiation light indicate that the charge relaxation processes caused by those defects are in the orders of micro seconds.