Progress in LPP EUV source development at Osaka University

Noriaki Miyanaga, Hiroaki Nishimura, Shinsuke Fujioka, Tatsuya Aota, Shigeaki Uchida, Michiteru Yamaura, Yoshinori Shimada, Kazuhisa Hashimoto, Keiji Nagai, Takayoshi Norimatsu, Katsunobu Nishihara, Masakatsu Murakami, Vasilli Zhakhovskii, Young Gwang Kang, Atsushi Sunahara, Hiroyuki Furukawa, Akira Sasaki, Takeshi Nishikawa, Masahiro Nakatsuka, Hisanori Fujita & 4 others Koji Tsubakimoto, Hidetsugu Yoshida, Yasukazu Izawa, Kunioki Mima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

For EUV lithography the generation of clean and efficient light source and the high-power laser technology are key issues. Theoretical understanding with modeling and simulation of laser-produced EUV source based on detailed experimental database gives us the prediction of optimal plasma conditions and their suitable laser conditions for different target materials (tin, xenon and lithium). With keeping etendue limit the optimal plasma size is determined by an appropriate optical depth which can be controlled by the combination of laser wavelength and pulse width. The most promising candidate is tin (Sn) plasma heated by Nd:YAG laser with a pulse width of a few ns. Therefore the generation technology of clean Sn plasma is a current important subject to be resolved for practical use. For this purpose we have examined the feasibility of laser-driven rocket-like injection of extremely mass-limited Sn or SnO2 (punched-out target) with a speed exceeding 100m/s. Such a mass-limited low-density target is most preferable for substantial reduction of ion energy compared with usual bulk target. For high average power EUV generation we are developing a laser system which is CW laser diode pumped Nd:YAG ceramic laser (master oscillator and power amplifier system) operating at 5-10 kHz repetition rate. The design of practical laser for EUV source is being carried out based on the recent performance of >1 kW output power.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6151 I
DOIs
Publication statusPublished - 2006
EventEmerging Lithographic Technologies X - San Jose, CA, United States
Duration: Jan 21 2006Jan 23 2006

Other

OtherEmerging Lithographic Technologies X
CountryUnited States
CitySan Jose, CA
Period1/21/061/23/06

Fingerprint

Lasers
lasers
Plasmas
tin
pulse duration
Tin
Laser pulses
Extreme ultraviolet lithography
Continuous wave lasers
power amplifiers
rockets
High power lasers
Xenon
yttrium-aluminum garnet
optical thickness
xenon
high power lasers
Rockets
Power amplifiers
YAG lasers

Keywords

  • EUV source
  • Laser-produced plasmas
  • Plasma modeling
  • Targets
  • YAG laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Miyanaga, N., Nishimura, H., Fujioka, S., Aota, T., Uchida, S., Yamaura, M., ... Mima, K. (2006). Progress in LPP EUV source development at Osaka University. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6151 I). [61511Q] https://doi.org/10.1117/12.656555

Progress in LPP EUV source development at Osaka University. / Miyanaga, Noriaki; Nishimura, Hiroaki; Fujioka, Shinsuke; Aota, Tatsuya; Uchida, Shigeaki; Yamaura, Michiteru; Shimada, Yoshinori; Hashimoto, Kazuhisa; Nagai, Keiji; Norimatsu, Takayoshi; Nishihara, Katsunobu; Murakami, Masakatsu; Zhakhovskii, Vasilli; Kang, Young Gwang; Sunahara, Atsushi; Furukawa, Hiroyuki; Sasaki, Akira; Nishikawa, Takeshi; Nakatsuka, Masahiro; Fujita, Hisanori; Tsubakimoto, Koji; Yoshida, Hidetsugu; Izawa, Yasukazu; Mima, Kunioki.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 I 2006. 61511Q.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Miyanaga, N, Nishimura, H, Fujioka, S, Aota, T, Uchida, S, Yamaura, M, Shimada, Y, Hashimoto, K, Nagai, K, Norimatsu, T, Nishihara, K, Murakami, M, Zhakhovskii, V, Kang, YG, Sunahara, A, Furukawa, H, Sasaki, A, Nishikawa, T, Nakatsuka, M, Fujita, H, Tsubakimoto, K, Yoshida, H, Izawa, Y & Mima, K 2006, Progress in LPP EUV source development at Osaka University. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6151 I, 61511Q, Emerging Lithographic Technologies X, San Jose, CA, United States, 1/21/06. https://doi.org/10.1117/12.656555
Miyanaga N, Nishimura H, Fujioka S, Aota T, Uchida S, Yamaura M et al. Progress in LPP EUV source development at Osaka University. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 I. 2006. 61511Q https://doi.org/10.1117/12.656555
Miyanaga, Noriaki ; Nishimura, Hiroaki ; Fujioka, Shinsuke ; Aota, Tatsuya ; Uchida, Shigeaki ; Yamaura, Michiteru ; Shimada, Yoshinori ; Hashimoto, Kazuhisa ; Nagai, Keiji ; Norimatsu, Takayoshi ; Nishihara, Katsunobu ; Murakami, Masakatsu ; Zhakhovskii, Vasilli ; Kang, Young Gwang ; Sunahara, Atsushi ; Furukawa, Hiroyuki ; Sasaki, Akira ; Nishikawa, Takeshi ; Nakatsuka, Masahiro ; Fujita, Hisanori ; Tsubakimoto, Koji ; Yoshida, Hidetsugu ; Izawa, Yasukazu ; Mima, Kunioki. / Progress in LPP EUV source development at Osaka University. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 I 2006.
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