Abstract
For EUV lithography the generation of clean and efficient light source and the high-power laser technology are key issues. Theoretical understanding with modeling and simulation of laser-produced EUV source based on detailed experimental database gives us the prediction of optimal plasma conditions and their suitable laser conditions for different target materials (tin, xenon and lithium). With keeping etendue limit the optimal plasma size is determined by an appropriate optical depth which can be controlled by the combination of laser wavelength and pulse width. The most promising candidate is tin (Sn) plasma heated by Nd:YAG laser with a pulse width of a few ns. Therefore the generation technology of clean Sn plasma is a current important subject to be resolved for practical use. For this purpose we have examined the feasibility of laser-driven rocket-like injection of extremely mass-limited Sn or SnO2 (punched-out target) with a speed exceeding 100m/s. Such a mass-limited low-density target is most preferable for substantial reduction of ion energy compared with usual bulk target. For high average power EUV generation we are developing a laser system which is CW laser diode pumped Nd:YAG ceramic laser (master oscillator and power amplifier system) operating at 5-10 kHz repetition rate. The design of practical laser for EUV source is being carried out based on the recent performance of >1 kW output power.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6151 I |
| DOIs | |
| Publication status | Published - 2006 |
| Event | Emerging Lithographic Technologies X - San Jose, CA, United States Duration: Jan 21 2006 → Jan 23 2006 |
Other
| Other | Emerging Lithographic Technologies X |
|---|---|
| Country | United States |
| City | San Jose, CA |
| Period | 1/21/06 → 1/23/06 |
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Keywords
- EUV source
- Laser-produced plasmas
- Plasma modeling
- Targets
- YAG laser
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Progress in LPP EUV source development at Osaka University. / Miyanaga, Noriaki; Nishimura, Hiroaki; Fujioka, Shinsuke; Aota, Tatsuya; Uchida, Shigeaki; Yamaura, Michiteru; Shimada, Yoshinori; Hashimoto, Kazuhisa; Nagai, Keiji; Norimatsu, Takayoshi; Nishihara, Katsunobu; Murakami, Masakatsu; Zhakhovskii, Vasilli; Kang, Young Gwang; Sunahara, Atsushi; Furukawa, Hiroyuki; Sasaki, Akira; Nishikawa, Takeshi; Nakatsuka, Masahiro; Fujita, Hisanori; Tsubakimoto, Koji; Yoshida, Hidetsugu; Izawa, Yasukazu; Mima, Kunioki.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6151 I 2006. 61511Q.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Progress in LPP EUV source development at Osaka University
AU - Miyanaga, Noriaki
AU - Nishimura, Hiroaki
AU - Fujioka, Shinsuke
AU - Aota, Tatsuya
AU - Uchida, Shigeaki
AU - Yamaura, Michiteru
AU - Shimada, Yoshinori
AU - Hashimoto, Kazuhisa
AU - Nagai, Keiji
AU - Norimatsu, Takayoshi
AU - Nishihara, Katsunobu
AU - Murakami, Masakatsu
AU - Zhakhovskii, Vasilli
AU - Kang, Young Gwang
AU - Sunahara, Atsushi
AU - Furukawa, Hiroyuki
AU - Sasaki, Akira
AU - Nishikawa, Takeshi
AU - Nakatsuka, Masahiro
AU - Fujita, Hisanori
AU - Tsubakimoto, Koji
AU - Yoshida, Hidetsugu
AU - Izawa, Yasukazu
AU - Mima, Kunioki
PY - 2006
Y1 - 2006
N2 - For EUV lithography the generation of clean and efficient light source and the high-power laser technology are key issues. Theoretical understanding with modeling and simulation of laser-produced EUV source based on detailed experimental database gives us the prediction of optimal plasma conditions and their suitable laser conditions for different target materials (tin, xenon and lithium). With keeping etendue limit the optimal plasma size is determined by an appropriate optical depth which can be controlled by the combination of laser wavelength and pulse width. The most promising candidate is tin (Sn) plasma heated by Nd:YAG laser with a pulse width of a few ns. Therefore the generation technology of clean Sn plasma is a current important subject to be resolved for practical use. For this purpose we have examined the feasibility of laser-driven rocket-like injection of extremely mass-limited Sn or SnO2 (punched-out target) with a speed exceeding 100m/s. Such a mass-limited low-density target is most preferable for substantial reduction of ion energy compared with usual bulk target. For high average power EUV generation we are developing a laser system which is CW laser diode pumped Nd:YAG ceramic laser (master oscillator and power amplifier system) operating at 5-10 kHz repetition rate. The design of practical laser for EUV source is being carried out based on the recent performance of >1 kW output power.
AB - For EUV lithography the generation of clean and efficient light source and the high-power laser technology are key issues. Theoretical understanding with modeling and simulation of laser-produced EUV source based on detailed experimental database gives us the prediction of optimal plasma conditions and their suitable laser conditions for different target materials (tin, xenon and lithium). With keeping etendue limit the optimal plasma size is determined by an appropriate optical depth which can be controlled by the combination of laser wavelength and pulse width. The most promising candidate is tin (Sn) plasma heated by Nd:YAG laser with a pulse width of a few ns. Therefore the generation technology of clean Sn plasma is a current important subject to be resolved for practical use. For this purpose we have examined the feasibility of laser-driven rocket-like injection of extremely mass-limited Sn or SnO2 (punched-out target) with a speed exceeding 100m/s. Such a mass-limited low-density target is most preferable for substantial reduction of ion energy compared with usual bulk target. For high average power EUV generation we are developing a laser system which is CW laser diode pumped Nd:YAG ceramic laser (master oscillator and power amplifier system) operating at 5-10 kHz repetition rate. The design of practical laser for EUV source is being carried out based on the recent performance of >1 kW output power.
KW - EUV source
KW - Laser-produced plasmas
KW - Plasma modeling
KW - Targets
KW - YAG laser
UR - http://www.scopus.com/inward/record.url?scp=33745597045&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33745597045&partnerID=8YFLogxK
U2 - 10.1117/12.656555
DO - 10.1117/12.656555
M3 - Conference contribution
SN - 0819461946
SN - 9780819461940
VL - 6151 I
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -