Pressure-induced metal-insulator transition of the mott insulator Ba2IrO4

Daisuke Orii, Masafumi Sakata, Atsushi Miyake, Katsuya Shimizu, Hirotaka Okabe, Masaaki Isobe, Eiji Takayama-Muromachi, Jun Akimitsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The electrical resistivity of single crystals of the spin-orbit Mott insulator Ba2IrO4 has been measured at pressures up to 30 GPa and at temperatures from 100 mK to 300 K. Ba2IrO4 shows a metal-insulator transition at around Pc = 24 GPa, though it does not show superconductivity down to 100 mK. The low-temperature resistivity in the metallic state does not obey a conventional Fermi-liquid description. This suggests that carriers are incoherently scattered by antiferromagnetic quantum spin fluctuations. The critical exponent δ for the metal-insulator transition is about 1.6, indicating that Ba2IrO4 is located near the boundary between a Mott and an Anderson insulator. This means that even in a single crystal, the effect of crystallographic disorder should not be ignored.

Original languageEnglish
Pages (from-to)349-351
Number of pages3
JournalJournal of the Korean Physical Society
Volume63
Issue number3
DOIs
Publication statusPublished - Aug 2013
Externally publishedYes

Keywords

  • Anderson localization
  • BaIrO
  • Iridates
  • Mott insulator
  • Pressure
  • Superconductivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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