Pressure-induced metal-insulator transition in the spin-orbit Mott insulator Ba2IrO4

H. Okabe, N. Takeshita, M. Isobe, E. Takayama-Muromachi, T. Muranaka, J. Akimitsu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Electronic transport properties in the spin-orbit Mott insulator Ba 2IrO4 were studied under high pressure (P), up to 15 GPa. Resistivity measurements revealed a metal-insulator (M-I) transition at 13.8 GPa in Ba2IrO4. In the insulating state (P<13.8 GPa), the resistivity well follows the variable-range-hopping regime, suggesting that the carrier conduction is dominated by Anderson localization. In the metallic state (P<13.8 GPa), non-Fermi-liquid behavior was observed at low temperature. Ba2IrO4 exhibits an unconventional critical exponent (δ=1-2) at the M-I transition. These results suggest that Ba 2IrO4 has an unusual electronic state affected by the "marginal quantum critical point (MQCP)."

Original languageEnglish
Article number115127
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number11
DOIs
Publication statusPublished - Sep 21 2011
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Pressure-induced metal-insulator transition in the spin-orbit Mott insulator Ba<sub>2</sub>IrO<sub>4</sub>'. Together they form a unique fingerprint.

  • Cite this