Pressure-induced metal-insulator transition in the spin-orbit Mott insulator Ba2IrO4

H. Okabe; N. Takeshita; M. Isobe; E. Takayama-Muromachi; T. Muranaka; J. Akimitsu

doi:10.1103/PhysRevB.84.115127

Pressure-induced metal-insulator transition in the spin-orbit Mott insulator Ba₂IrO₄

H. Okabe, N. Takeshita, M. Isobe, E. Takayama-Muromachi, T. Muranaka, J. Akimitsu

Research output: Contribution to journal › Article › peer-review

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Abstract

Electronic transport properties in the spin-orbit Mott insulator Ba ₂IrO₄ were studied under high pressure (P), up to 15 GPa. Resistivity measurements revealed a metal-insulator (M-I) transition at 13.8 GPa in Ba₂IrO₄. In the insulating state (P<13.8 GPa), the resistivity well follows the variable-range-hopping regime, suggesting that the carrier conduction is dominated by Anderson localization. In the metallic state (P<13.8 GPa), non-Fermi-liquid behavior was observed at low temperature. Ba₂IrO₄ exhibits an unconventional critical exponent (δ=1-2) at the M-I transition. These results suggest that Ba ₂IrO₄ has an unusual electronic state affected by the "marginal quantum critical point (MQCP)."

Original language	English
Article number	115127
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.84.115127
Publication status	Published - Sept 21 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.84.115127

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AU - Okabe, H.

AU - Takeshita, N.

AU - Isobe, M.

AU - Takayama-Muromachi, E.

AU - Muranaka, T.

AU - Akimitsu, J.

PY - 2011/9/21

Y1 - 2011/9/21

N2 - Electronic transport properties in the spin-orbit Mott insulator Ba 2IrO4 were studied under high pressure (P), up to 15 GPa. Resistivity measurements revealed a metal-insulator (M-I) transition at 13.8 GPa in Ba2IrO4. In the insulating state (P<13.8 GPa), the resistivity well follows the variable-range-hopping regime, suggesting that the carrier conduction is dominated by Anderson localization. In the metallic state (P<13.8 GPa), non-Fermi-liquid behavior was observed at low temperature. Ba2IrO4 exhibits an unconventional critical exponent (δ=1-2) at the M-I transition. These results suggest that Ba 2IrO4 has an unusual electronic state affected by the "marginal quantum critical point (MQCP)."

AB - Electronic transport properties in the spin-orbit Mott insulator Ba 2IrO4 were studied under high pressure (P), up to 15 GPa. Resistivity measurements revealed a metal-insulator (M-I) transition at 13.8 GPa in Ba2IrO4. In the insulating state (P<13.8 GPa), the resistivity well follows the variable-range-hopping regime, suggesting that the carrier conduction is dominated by Anderson localization. In the metallic state (P<13.8 GPa), non-Fermi-liquid behavior was observed at low temperature. Ba2IrO4 exhibits an unconventional critical exponent (δ=1-2) at the M-I transition. These results suggest that Ba 2IrO4 has an unusual electronic state affected by the "marginal quantum critical point (MQCP)."

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Pressure-induced metal-insulator transition in the spin-orbit Mott insulator Ba₂IrO₄

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