Pressure-Induced Conductivity in a Neutral Nonplanar Spin-Localized Radical

Manuel Souto, Hengbo Cui, Miriam Peña-Álvarez, Valentín G. Baonza, Harald Olaf Jeschke, Milan Tomic, Roser Valentí, Davide Blasi, Imma Ratera, Concepció Rovira, Jaume Veciana

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

There is a growing interest in the development of single-component molecular conductors based on neutral organic radicals that are mainly formed by delocalized planar radicals, such as phenalenyl or thiazolyl radicals. However, there are no examples of systems based on nonplanar and spin-localized C-centered radicals exhibiting electrical conductivity due to their large Coulomb energy (U) repulsion and narrow electronic bandwidth (W) that give rise to a Mott insulator behavior. Here we present a new type of nonplanar neutral radical conductor attained by linking a tetrathiafulvalene (TTF) donor unit to a neutral polychlorotriphenylmethyl radical (PTM) with the important feature that the TTF unit enhances the overlap between the radical molecules as a consequence of short intermolecular S···S interactions. This system becomes semiconducting upon the application of high pressure thanks to increased electronic bandwidth and charge reorganization opening the way to develop a new family of neutral radical conductors.

Original languageEnglish
Pages (from-to)11517-11525
Number of pages9
JournalJournal of the American Chemical Society
Volume138
Issue number36
DOIs
Publication statusPublished - Sep 14 2016
Externally publishedYes

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

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    Souto, M., Cui, H., Peña-Álvarez, M., Baonza, V. G., Jeschke, H. O., Tomic, M., Valentí, R., Blasi, D., Ratera, I., Rovira, C., & Veciana, J. (2016). Pressure-Induced Conductivity in a Neutral Nonplanar Spin-Localized Radical. Journal of the American Chemical Society, 138(36), 11517-11525. https://doi.org/10.1021/jacs.6b02888