TY - JOUR
T1 - Pressure-Induced Conductivity in a Neutral Nonplanar Spin-Localized Radical
AU - Souto, Manuel
AU - Cui, Hengbo
AU - Peña-Álvarez, Miriam
AU - Baonza, Valentín G.
AU - Jeschke, Harald Olaf
AU - Tomic, Milan
AU - Valentí, Roser
AU - Blasi, Davide
AU - Ratera, Imma
AU - Rovira, Concepció
AU - Veciana, Jaume
N1 - Funding Information:
This work was supported by the EU ITN iSwitch 642196 DGI grant (BeWell; CTQ2013-40480-R), the Networking Research Center on Bioengineering, Biomaterials, and Nanomedicine (CIBER-BBN), and the Generalitat de Catalunya (grant 2014-SGR-17). This work has also been supported by MINECO through the projects CSD2007-00045, CTQ2012- 38599-C02-02 and CTQ2013-48252-P.
Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/9/14
Y1 - 2016/9/14
N2 - There is a growing interest in the development of single-component molecular conductors based on neutral organic radicals that are mainly formed by delocalized planar radicals, such as phenalenyl or thiazolyl radicals. However, there are no examples of systems based on nonplanar and spin-localized C-centered radicals exhibiting electrical conductivity due to their large Coulomb energy (U) repulsion and narrow electronic bandwidth (W) that give rise to a Mott insulator behavior. Here we present a new type of nonplanar neutral radical conductor attained by linking a tetrathiafulvalene (TTF) donor unit to a neutral polychlorotriphenylmethyl radical (PTM) with the important feature that the TTF unit enhances the overlap between the radical molecules as a consequence of short intermolecular S···S interactions. This system becomes semiconducting upon the application of high pressure thanks to increased electronic bandwidth and charge reorganization opening the way to develop a new family of neutral radical conductors.
AB - There is a growing interest in the development of single-component molecular conductors based on neutral organic radicals that are mainly formed by delocalized planar radicals, such as phenalenyl or thiazolyl radicals. However, there are no examples of systems based on nonplanar and spin-localized C-centered radicals exhibiting electrical conductivity due to their large Coulomb energy (U) repulsion and narrow electronic bandwidth (W) that give rise to a Mott insulator behavior. Here we present a new type of nonplanar neutral radical conductor attained by linking a tetrathiafulvalene (TTF) donor unit to a neutral polychlorotriphenylmethyl radical (PTM) with the important feature that the TTF unit enhances the overlap between the radical molecules as a consequence of short intermolecular S···S interactions. This system becomes semiconducting upon the application of high pressure thanks to increased electronic bandwidth and charge reorganization opening the way to develop a new family of neutral radical conductors.
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U2 - 10.1021/jacs.6b02888
DO - 10.1021/jacs.6b02888
M3 - Article
AN - SCOPUS:84987817203
VL - 138
SP - 11517
EP - 11525
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 36
ER -