Pressure-dependence of superconducting behavior in CeRh2 Si2

T. C. Kobayashi, T. Muramatsu, M. Takimoto, K. Hanazono, K. Shimizu, K. Amaya, S. Araki, R. Settai, Y. Onuki

Research output: Contribution to journal › Conference article

10 Citations (Scopus)

Abstract

Electrical resistance has been investigated in a high-quality polycrystal of CeRh2Si2 under high pressures of up to 5.4 GPa. We found a resistance drop corresponding to superconductivity in the pressure range from 0.7 to 2.9 GPa. The relative decrease of the resistance shows a maximum in the vicinity of a critical pressure PC. An onset temperature of superconductivity is about 0.6 K.

Original languageEnglish
Pages (from-to)7-8
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Japan
Duration: Aug 24 1999 → Aug 28 1999

Keywords

  • CeRhsi
  • Electrical resistance
  • High pressure
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Access to Document

Fingerprint Dive into the research topics of 'Pressure-dependence of superconducting behavior in CeRh<sub>2</sub> Si<sub>2</sub>'. Together they form a unique fingerprint.

    • Cite this

    Kobayashi, T. C., Muramatsu, T., Takimoto, M., Hanazono, K., Shimizu, K., Amaya, K., Araki, S., Settai, R., & Onuki, Y. (2000). Pressure-dependence of superconducting behavior in CeRh2 Si2. Physica B: Condensed Matter, 281-282, 7-8. https://doi.org/10.1016/S0921-4526(99)00930-8