Preparation of ZnO Films by an Activated Reactive Evaporation Method

Miura Yoshinari, Takada Jun, Kawamura Toshio, Oda Kiichi, Osaka Akiyoshi, Bando Yoshichika, Terashima Takahito

Research output: Contribution to journalArticle

Abstract

ZnO films were prepared on silica glass substrates by the use of an R. F. activated reactive evaporation (ARE) method, and were examined by X-ray diffraction (XRD) and scanning electron micrograph. XRD indicated that they were c-axis oriented and that an R. F. plasma of Zn and O was necessary for the film deposition. The optimum conditions for a dense film with a fine texture of the surface and having good crystallinity were as follows ; R. F. power : 150~200W, the substrate temperature : 400°C, the oxygen pressure : 2.0 ×10-4Torr, the evaporation rate : 5.0 Å/s. The standard devitation σ of the X-ray rocking curve of (002) for the film was 1.9°, smaller than that of the film prepared by using an R. F. sputtering method.

Original languageEnglish
Pages (from-to)379-384
Number of pages6
Journaljournal of the society of materials science, japan
Volume40
Issue number451
DOIs
Publication statusPublished - Jan 1 1978

    Fingerprint

Keywords

  • Activated reactive evaporation method
  • Piezoelectric film
  • RF plasma
  • ZnO thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yoshinari, M., Jun, T., Toshio, K., Kiichi, O., Akiyoshi, O., Yoshichika, B., & Takahito, T. (1978). Preparation of ZnO Films by an Activated Reactive Evaporation Method. journal of the society of materials science, japan, 40(451), 379-384. https://doi.org/10.2472/jsms.40.379