Preparation of epitaxial Fe3-xTixO4 Solid Solution Films by Sputtering Method

Kazuhiro Nishimura, Masahiro Kitazono, Makoto Nakanishi, Tatsuo Fujii

Research output: Contribution to journalArticle

Abstract

Titanomagnetite solid solution Fe3-xTixO4 films have been prepared on α-Al2O3(0001) substrates by a reactive sputtering method. Nearly single phase of Fe3-xTixO4 with (111)-orientation was epitaxially formed on the substrate. The epitaxial relationship of Fe3-xTixO4 [110] (111) || α-Al2O3 [1100] (0001) was confirmed. All films with x < 0.6 exhibited ferrimagnetic property at room temperature. The saturation magnetization of the films showed systematic changes depending on the Ti concentration x. The Ti4+ ions in Fe3-xTixO4 can be expected to substitute for the octahedral Fe3+ ions by following the Néel-Chevallier model. The films had thermally activated semiconductor behavior and the electrical resistivity with exponentially increasing of the Ti concentration. Indirect optical band gap observed from an absorption spectroscopy also shows monotonical increase with the increasing of Ti concentration.

Original languageEnglish
Pages (from-to)585-588
Number of pages4
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume65
Issue number9
DOIs
Publication statusPublished - Jan 1 2018

Keywords

  • FeTiO solid solution
  • Ferrimagnetic semiconductor
  • Sputtering method
  • Thin film

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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