Preparation of bi-axially aligned YBa2Cu3O7-δ film on CeO2-buffered MgO by chemical solution deposition

K. Yamagiwa, H. Hiei, Y. Takahashi, S. B. Kim, K. Matsumoto, H. Ikuta, U. Mizutani, I. Hirabayashi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We have succeeded in preparing in-plane aligned YBa2Cu3O7-δ (Y123) film by chemical solution deposition (CSD) processing on CeO2 (100)-buffered MgO (100) substrates. The CeO2 buffer film was deposited on MgO (100) single crystalline substrate by pulsed laser deposition (PLD). For CSD coating, a homogeneous coating solution having a molar ratio of Y:Ba:Cu = 1:2:3, was prepared by dissolving metal naphthenates in toluene. This solution was spin-coated both on the YSZ (100) and on the CeO2-buffered MgO (100) single crystalline substrates. The precursor films were calcined at 425 °C and fired at various temperatures under low oxygen partial pressure (pO2). All Y123 films showed strong (00n) peaks, which correspond to c-axis orientation perpendicular to the substrates and their a/b-axes were in-plane aligned. We confirmed that CeO2 buffer is usable for CSD processing. While the Y123 films on the YSZ reacted with the substrate forming BaZrO3 phase and did not show sufficient superconducting properties. The Tc,zero value of the Y123 film prepared on CeO2-buffered MgO substrate was 91.5 K and Jc was 1.2x×105 A/cm2 at 77 K, 0 T.

Original languageEnglish
Pages (from-to)301-305
Number of pages5
JournalPhysica C: Superconductivity and its applications
Volume334
Issue number3
DOIs
Publication statusPublished - Jun 15 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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