Preparation and characterization of ilmenite-hematite thin films

Y. Takada, M. Nakanishi, T. Fujii, J. Takada

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Ilmenite-hematite solid solution (Fe2-xTixO3) is one of the candidates for practical magnetic semiconductors with the high Curie temperature (TC). We have successfully prepared well-crystallized and epitaxial Fe1.4Ti0.6O3 films by using a reactive helicon plasma sputtering technique. The structural characterizations indicated that the films had the order structure (R over(3, -) symmetry), where Ti- and Fe-rich layers were stacked alternately along the c-axis, without any secondary phase. The subsequent annealing of the films in vacuum at 700 °C promoted the R over(3, -) symmetry. Only the films having the good R over(3, -) symmetry had large ferrimagnetic moments at room temperature. The resistivities of the films clearly showed semiconducting behavior, i.e., logarithmic resistivity showed a monotonous increase with increasing the inverse temperature. The minimum room temperature resistivity of the films was about 10-1 Ω cm. From the Hall effect measurement all films had n-type conduction. The carrier concentration was estimated to be about 1019-1021 cm-3, depending on the annealing conditions.

Original languageEnglish
Pages (from-to)2108-2110
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - Mar 1 2007

Keywords

  • Epitaxial film
  • Hematite
  • Ilmenite
  • Magnetic semiconductor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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