Preparation and characterization of epitaxial Fe2-x Tix O3 films with various Ti concentrations (0.5<x<1.0)

Y. Takada, M. Nakanishi, T. Fujii, J. Takada, Y. Muraoka

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12 Citations (Scopus)

Abstract

An ilmenite-hematite solid solution (Fe2-x Tix O3) is one of the candidates for practical magnetic semiconductors with a high Curie temperature. We have prepared well-crystallized epitaxial Fe2-x Tix O3 films with a wide range of Ti concentrations- x=0.50, 0.60, 0.65, 0.76, 0.87, and 0.94-on α -Al2 O3 (001) substrates. The films are prepared by a reactive helicon plasma sputtering technique to evaporate Fe and TiO targets simultaneously under optimized oxygen pressure conditions. The structural characterizations of the films reveal that all films have a single phase of the ordered structure with R 3- symmetry, where Ti-rich and Fe-rich layers are stacked alternately along the c axis. All films have large ferrimagnetic moments at low temperature, and room temperature magnetization is clearly observed at x<0.7. The inverse temperature dependence of the resistivities of the films indicates their semiconducting behavior. The film resistivities decrease with decreasing Ti concentration.

Original languageEnglish
Article number033713
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - Aug 25 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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