Preparation and characterization of epitaxial Fe2-x Tix O3 films with various Ti concentrations (0.5

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Abstract

An ilmenite-hematite solid solution (Fe2-x Tix O3) is one of the candidates for practical magnetic semiconductors with a high Curie temperature. We have prepared well-crystallized epitaxial Fe2-x Tix O3 films with a wide range of Ti concentrations- x=0.50, 0.60, 0.65, 0.76, 0.87, and 0.94-on α -Al2 O3 (001) substrates. The films are prepared by a reactive helicon plasma sputtering technique to evaporate Fe and TiO targets simultaneously under optimized oxygen pressure conditions. The structural characterizations of the films reveal that all films have a single phase of the ordered structure with R 3- symmetry, where Ti-rich and Fe-rich layers are stacked alternately along the c axis. All films have large ferrimagnetic moments at low temperature, and room temperature magnetization is clearly observed at x

Original languageEnglish
Article number033713
JournalJournal of Applied Physics
Volume104
Issue number3
DOIs
Publication statusPublished - 2008

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preparation
ilmenite
hematite
Curie temperature
solid solutions
sputtering
moments
magnetization
symmetry
room temperature
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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title = "Preparation and characterization of epitaxial Fe2-x Tix O3 films with various Ti concentrations (0.5",
abstract = "An ilmenite-hematite solid solution (Fe2-x Tix O3) is one of the candidates for practical magnetic semiconductors with a high Curie temperature. We have prepared well-crystallized epitaxial Fe2-x Tix O3 films with a wide range of Ti concentrations- x=0.50, 0.60, 0.65, 0.76, 0.87, and 0.94-on α -Al2 O3 (001) substrates. The films are prepared by a reactive helicon plasma sputtering technique to evaporate Fe and TiO targets simultaneously under optimized oxygen pressure conditions. The structural characterizations of the films reveal that all films have a single phase of the ordered structure with R 3- symmetry, where Ti-rich and Fe-rich layers are stacked alternately along the c axis. All films have large ferrimagnetic moments at low temperature, and room temperature magnetization is clearly observed at x",
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T1 - Preparation and characterization of epitaxial Fe2-x Tix O3 films with various Ti concentrations (0.5

AU - Takada, Y.

AU - Nakanishi, Makoto

AU - Fujii, Tatsuo

AU - Takada, J.

AU - Muraoka, Yuji

PY - 2008

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N2 - An ilmenite-hematite solid solution (Fe2-x Tix O3) is one of the candidates for practical magnetic semiconductors with a high Curie temperature. We have prepared well-crystallized epitaxial Fe2-x Tix O3 films with a wide range of Ti concentrations- x=0.50, 0.60, 0.65, 0.76, 0.87, and 0.94-on α -Al2 O3 (001) substrates. The films are prepared by a reactive helicon plasma sputtering technique to evaporate Fe and TiO targets simultaneously under optimized oxygen pressure conditions. The structural characterizations of the films reveal that all films have a single phase of the ordered structure with R 3- symmetry, where Ti-rich and Fe-rich layers are stacked alternately along the c axis. All films have large ferrimagnetic moments at low temperature, and room temperature magnetization is clearly observed at x

AB - An ilmenite-hematite solid solution (Fe2-x Tix O3) is one of the candidates for practical magnetic semiconductors with a high Curie temperature. We have prepared well-crystallized epitaxial Fe2-x Tix O3 films with a wide range of Ti concentrations- x=0.50, 0.60, 0.65, 0.76, 0.87, and 0.94-on α -Al2 O3 (001) substrates. The films are prepared by a reactive helicon plasma sputtering technique to evaporate Fe and TiO targets simultaneously under optimized oxygen pressure conditions. The structural characterizations of the films reveal that all films have a single phase of the ordered structure with R 3- symmetry, where Ti-rich and Fe-rich layers are stacked alternately along the c axis. All films have large ferrimagnetic moments at low temperature, and room temperature magnetization is clearly observed at x

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