Preparation and characterization of (001)- and (110)-oriented 0.6FeTi O3.0.4Fe2O3 films for room temperature magnetic semiconductors

Yusuke Takada, Makoto Nakanishi, Tatsuo Fujii, Jun Takada

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14 Citations (Scopus)

Abstract

Thin films of ilmenite-hematite solid solution 0.6FeTi O3 0.4 Fe2O3 were prepared on α- Al2O 3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2 =1.3× 10 -3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O3 0.4 Fe2O3 films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O3 0.4 Fe2O3.

Original languageEnglish
Article number252102
JournalApplied Physics Letters
Volume92
Issue number25
DOIs
Publication statusPublished - 2008

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preparation
room temperature
magnetization
electrical resistivity
ilmenite
hematite
thin films
partial pressure
solid solutions
saturation
oxides
symmetry
oxygen
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Thin films of ilmenite-hematite solid solution 0.6FeTi O3 0.4 Fe2O3 were prepared on α- Al2O 3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2 =1.3× 10 -3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O3 0.4 Fe2O3 films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O3 0.4 Fe2O3.",
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T1 - Preparation and characterization of (001)- and (110)-oriented 0.6FeTi O3.0.4Fe2O3 films for room temperature magnetic semiconductors

AU - Takada, Yusuke

AU - Nakanishi, Makoto

AU - Fujii, Tatsuo

AU - Takada, Jun

PY - 2008

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N2 - Thin films of ilmenite-hematite solid solution 0.6FeTi O3 0.4 Fe2O3 were prepared on α- Al2O 3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2 =1.3× 10 -3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O3 0.4 Fe2O3 films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O3 0.4 Fe2O3.

AB - Thin films of ilmenite-hematite solid solution 0.6FeTi O3 0.4 Fe2O3 were prepared on α- Al2O 3 (001) and (110) single-crystalline substrates. The oxide phases formed in the thin films strongly depended on the oxygen partial pressure (PO2) during deposition. At PO2 =1.3× 10 -3 Pa, regardless of thesubstrate orientation, well-ordered 0.6FeTi O3 0.4 Fe2O3 films with R 3- symmetry were epitaxially formed. Large saturation magnetization at room temperature was observed in both (001)- and (110)-oriented films. The differences in the magnetization and electrical resistivity curves between the (001)- and (110)-oriented films indicated the anisotropic nature of 0.6FeTi O3 0.4 Fe2O3.

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