Potential failure mode identification of operational amplifier circuit board by using high accelerated limit test

Junji Sakamoto, Ryoma Hirata, Tadahiro Shibutani

Research output: Contribution to journalArticle

Abstract

In this study, the potential failure modes of a small operational amplifier circuit board were investigated. The high accelerated limit test (HALT) was employed to identify the failure modes under multi-axial vibration and temperature loadings. Five stress tests, specifically, low and high temperature, vibration, thermal shock, and composite profiles were performed. An aluminum electrolytic capacitor was damaged under the low temperature process, whereas the capacitance of a ceramic capacitor decreased under the high temperature process. The vibration test revealed that mechanical fatigue occurs at the terminal leads of aluminum electrolytic capacitors. The HALT also revealed coupled effects between high and low temperature processes and vibration.

Original languageEnglish
Pages (from-to)19-24
Number of pages6
JournalMicroelectronics Reliability
Volume85
DOIs
Publication statusPublished - Jun 2018
Externally publishedYes

Fingerprint

operational amplifiers
Operational amplifiers
failure modes
circuit boards
Failure modes
capacitors
Electrolytic capacitors
vibration
Networks (circuits)
Aluminum
aluminum
vibration tests
Low temperature effects
thermal shock
High temperature effects
Ceramic capacitors
Temperature
temperature
Thermal shock
capacitance

Keywords

  • High accelerated limit test
  • Operational amplifier circuit board
  • Potential failure mode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Potential failure mode identification of operational amplifier circuit board by using high accelerated limit test. / Sakamoto, Junji; Hirata, Ryoma; Shibutani, Tadahiro.

In: Microelectronics Reliability, Vol. 85, 06.2018, p. 19-24.

Research output: Contribution to journalArticle

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