Potential barriers to electron carriers in C60 field-effect transistors

Atsushi Konishi, Eiji Shikoh, Yoshihiro Kubozono, Akihiko Fujiwara

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    2 Citations (Scopus)

    Abstract

    Transport properties of C60 field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C60 channel, and barriers to carrier hopping between trap states in the channel of C60.

    Original languageEnglish
    Article number173302
    JournalApplied Physics Letters
    Volume92
    Issue number17
    DOIs
    Publication statusPublished - 2008

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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