Potential barriers to electron carriers in C60 field-effect transistors

Atsushi Konishi; Eiji Shikoh; Yoshihiro Kubozono; Akihiko Fujiwara

doi:10.1063/1.2917469

Potential barriers to electron carriers in C60 field-effect transistors

Atsushi Konishi, Eiji Shikoh, Yoshihiro Kubozono, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Transport properties of C60 field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C60 channel, and barriers to carrier hopping between trap states in the channel of C60.

Original language	English
Article number	173302
Journal	Applied Physics Letters
Volume	92
Issue number	17
DOIs	https://doi.org/10.1063/1.2917469
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Transport properties of C60 field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C60 channel, and barriers to carrier hopping between trap states in the channel of C60.",

author = "Atsushi Konishi and Eiji Shikoh and Yoshihiro Kubozono and Akihiko Fujiwara",

note = "Funding Information: This work is supported in part by the Grant-in-Aid for Scientific Research (Grant No. 17540322) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.",

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AU - Konishi, Atsushi

AU - Shikoh, Eiji

AU - Kubozono, Yoshihiro

AU - Fujiwara, Akihiko

N1 - Funding Information: This work is supported in part by the Grant-in-Aid for Scientific Research (Grant No. 17540322) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.

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N2 - Transport properties of C60 field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C60 channel, and barriers to carrier hopping between trap states in the channel of C60.

AB - Transport properties of C60 field-effect transistors (FETs) have been investigated in the temperature range between 160 and 300 K. Activation energy was estimated from temperature dependence of resistance at the linear region and of current at the saturation region for various channel lengths. Variation of activation energy values is attributed to carrier injection barrier at contact between source electrode and C60 channel, and barriers to carrier hopping between trap states in the channel of C60.

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Potential barriers to electron carriers in C60 field-effect transistors

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