Polarization dependence of soft-x-ray Raman scattering at the L edge

Y. Harada; T. Kinugasa; R. Eguchi; M. Matsubara; A. Kotani; M. Watanabe; A. Yagishita; S. Shin

doi:10.1103/PhysRevB.61.12854

Polarization dependence of soft-x-ray Raman scattering at the L edge

Y. Harada, T. Kinugasa, R. Eguchi, M. Matsubara, A. Kotani, M. Watanabe, A. Yagishita, S. Shin

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

Polarization dependence of soft-x-ray Raman scattering was investigated at the Ti (Formula presented) absorption edge of (Formula presented) Strong Raman scattering feature appears about 14 eV below elastic peaks with strong polarization dependence. These Raman scattering structures are charge transfer excitations to the antibonding state between (Formula presented) and (Formula presented) states, because they are enhanced when the incident photon energies are tuned at satellite structures of Ti (Formula presented) absorption spectrum. Broad Raman scattering structures are found between 3 eV and 10 eV below elastic peaks. They are assigned to be nonbonding type charge transfer excitations or interband transition from O (Formula presented) valence to Ti (Formula presented) conduction bands, which includes the crystal field splitting in (Formula presented) symmetry with two Ti-O bond lengths.

Original language	English
Pages (from-to)	12854-12859
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	61
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.61.12854
Publication status	Published - 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Polarization dependence of soft-x-ray Raman scattering at the L edge",

abstract = "Polarization dependence of soft-x-ray Raman scattering was investigated at the Ti (Formula presented) absorption edge of (Formula presented) Strong Raman scattering feature appears about 14 eV below elastic peaks with strong polarization dependence. These Raman scattering structures are charge transfer excitations to the antibonding state between (Formula presented) and (Formula presented) states, because they are enhanced when the incident photon energies are tuned at satellite structures of Ti (Formula presented) absorption spectrum. Broad Raman scattering structures are found between 3 eV and 10 eV below elastic peaks. They are assigned to be nonbonding type charge transfer excitations or interband transition from O (Formula presented) valence to Ti (Formula presented) conduction bands, which includes the crystal field splitting in (Formula presented) symmetry with two Ti-O bond lengths.",

author = "Y. Harada and T. Kinugasa and R. Eguchi and M. Matsubara and A. Kotani and M. Watanabe and A. Yagishita and S. Shin",

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language = "English",

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journal = "Physical Review B-Condensed Matter",

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T1 - Polarization dependence of soft-x-ray Raman scattering at the L edge

AU - Harada, Y.

AU - Kinugasa, T.

AU - Eguchi, R.

AU - Matsubara, M.

AU - Kotani, A.

AU - Watanabe, M.

AU - Yagishita, A.

AU - Shin, S.

PY - 2000

Y1 - 2000

N2 - Polarization dependence of soft-x-ray Raman scattering was investigated at the Ti (Formula presented) absorption edge of (Formula presented) Strong Raman scattering feature appears about 14 eV below elastic peaks with strong polarization dependence. These Raman scattering structures are charge transfer excitations to the antibonding state between (Formula presented) and (Formula presented) states, because they are enhanced when the incident photon energies are tuned at satellite structures of Ti (Formula presented) absorption spectrum. Broad Raman scattering structures are found between 3 eV and 10 eV below elastic peaks. They are assigned to be nonbonding type charge transfer excitations or interband transition from O (Formula presented) valence to Ti (Formula presented) conduction bands, which includes the crystal field splitting in (Formula presented) symmetry with two Ti-O bond lengths.

AB - Polarization dependence of soft-x-ray Raman scattering was investigated at the Ti (Formula presented) absorption edge of (Formula presented) Strong Raman scattering feature appears about 14 eV below elastic peaks with strong polarization dependence. These Raman scattering structures are charge transfer excitations to the antibonding state between (Formula presented) and (Formula presented) states, because they are enhanced when the incident photon energies are tuned at satellite structures of Ti (Formula presented) absorption spectrum. Broad Raman scattering structures are found between 3 eV and 10 eV below elastic peaks. They are assigned to be nonbonding type charge transfer excitations or interband transition from O (Formula presented) valence to Ti (Formula presented) conduction bands, which includes the crystal field splitting in (Formula presented) symmetry with two Ti-O bond lengths.

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