Abstract
Polarization dependence of soft-x-ray Raman scattering was investigated at the Ti (Formula presented) absorption edge of (Formula presented) Strong Raman scattering feature appears about 14 eV below elastic peaks with strong polarization dependence. These Raman scattering structures are charge transfer excitations to the antibonding state between (Formula presented) and (Formula presented) states, because they are enhanced when the incident photon energies are tuned at satellite structures of Ti (Formula presented) absorption spectrum. Broad Raman scattering structures are found between 3 eV and 10 eV below elastic peaks. They are assigned to be nonbonding type charge transfer excitations or interband transition from O (Formula presented) valence to Ti (Formula presented) conduction bands, which includes the crystal field splitting in (Formula presented) symmetry with two Ti-O bond lengths.
| Original language | English |
|---|---|
| Pages (from-to) | 12854-12859 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 61 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - Jan 1 2000 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics