Polarization dependence of soft-x-ray Raman scattering at the L edge

Y. Harada, T. Kinugasa, R. Eguchi, M. Matsubara, A. Kotani, M. Watanabe, A. Yagishita, S. Shin

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82 Citations (Scopus)


Polarization dependence of soft-x-ray Raman scattering was investigated at the Ti (Formula presented) absorption edge of (Formula presented) Strong Raman scattering feature appears about 14 eV below elastic peaks with strong polarization dependence. These Raman scattering structures are charge transfer excitations to the antibonding state between (Formula presented) and (Formula presented) states, because they are enhanced when the incident photon energies are tuned at satellite structures of Ti (Formula presented) absorption spectrum. Broad Raman scattering structures are found between 3 eV and 10 eV below elastic peaks. They are assigned to be nonbonding type charge transfer excitations or interband transition from O (Formula presented) valence to Ti (Formula presented) conduction bands, which includes the crystal field splitting in (Formula presented) symmetry with two Ti-O bond lengths.

Original languageEnglish
Pages (from-to)12854-12859
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
Publication statusPublished - 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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