Point defects induced by physical sputtering in wurtzite-type GaN crystal

Kenji Harafuji, Katsuyuki Kawamura

Research output: Contribution to journalArticle

10 Citations (Scopus)


A molecular dynamics simulation has been performed to investigate the dynamics of surface morphology and point defects during energetic Ar atom incidence to the wurtzite-type GaN (0001) crystal surface. Ar atoms at three energies, 151, 250, and 500 eV, are repeatedly impinged 30 times. N atoms are preferentially sputtered compared with Ga atoms. Ga atoms are sputtered mostly with N atoms in pairs. Ga and N vacancies are generated as Schottky defects, which are often paired. Frenkel defects are generated only for Ga atoms. There exist no N interstitials inside the crystal. Ga atoms are mobile and can exist as interstitials. The number of Ga vacancies is very similar to that of N vacancies along the depth direction of the crystal.

Original languageEnglish
Article number011001
JournalJapanese journal of applied physics
Issue number1 Part 1
Publication statusPublished - Apr 19 2010

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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