Point defects induced by physical sputtering in wurtzite-type GaN crystal

Kenji Harafuji, Katsuyuki Kawamura

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A molecular dynamics simulation has been performed to investigate the dynamics of surface morphology and point defects during energetic Ar atom incidence to the wurtzite-type GaN (0001) crystal surface. Ar atoms at three energies, 151, 250, and 500 eV, are repeatedly impinged 30 times. N atoms are preferentially sputtered compared with Ga atoms. Ga atoms are sputtered mostly with N atoms in pairs. Ga and N vacancies are generated as Schottky defects, which are often paired. Frenkel defects are generated only for Ga atoms. There exist no N interstitials inside the crystal. Ga atoms are mobile and can exist as interstitials. The number of Ga vacancies is very similar to that of N vacancies along the depth direction of the crystal.

Original languageEnglish
Article number011001
JournalJapanese Journal of Applied Physics
Volume49
Issue number1 Part 1
DOIs
Publication statusPublished - 2010
Externally publishedYes

Fingerprint

Point defects
wurtzite
point defects
Sputtering
sputtering
Atoms
Crystals
crystals
atoms
Vacancies
interstitials
Frenkel defects
Defects
defects
crystal surfaces
Surface morphology
Molecular dynamics
incidence
molecular dynamics
Computer simulation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Point defects induced by physical sputtering in wurtzite-type GaN crystal. / Harafuji, Kenji; Kawamura, Katsuyuki.

In: Japanese Journal of Applied Physics, Vol. 49, No. 1 Part 1, 011001, 2010.

Research output: Contribution to journalArticle

Harafuji, Kenji ; Kawamura, Katsuyuki. / Point defects induced by physical sputtering in wurtzite-type GaN crystal. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 1 Part 1.
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