A molecular dynamics simulation has been performed to investigate the dynamics of surface morphology and point defects during energetic Ar atom incidence to the wurtzite-type GaN (0001) crystal surface. Ar atoms at three energies, 151, 250, and 500 eV, are repeatedly impinged 30 times. N atoms are preferentially sputtered compared with Ga atoms. Ga atoms are sputtered mostly with N atoms in pairs. Ga and N vacancies are generated as Schottky defects, which are often paired. Frenkel defects are generated only for Ga atoms. There exist no N interstitials inside the crystal. Ga atoms are mobile and can exist as interstitials. The number of Ga vacancies is very similar to that of N vacancies along the depth direction of the crystal.
ASJC Scopus subject areas
- Physics and Astronomy(all)