Platinum-platinum oxide gate ph isfet

Keiji Tsukada, Yuji Miyahara, Hiroyuki Miyagi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Platinum-platinum oxide gate ISFETs (ion sensitive field effect transistors) have been designed and fabricated for a stable pH microsensor. The platinum oxide layer, formed by a new fabrication process using an RF sputtering technique, was identified as PtO2 by X-ray photoelectron spectroscopy. The pH response of the platinum-platinum oxide gate ISFET was linear in the pH range between 1 and 10, and a sensitivity of 40.5±4.0 mV/pH was obtained. The ISFET developed had better stability than a conventional Si3N4 bare gate ISFET.

Original languageEnglish
Pages (from-to)2450-2453
Number of pages4
JournalJapanese Journal of Applied Physics
Volume28
Issue number12 R
DOIs
Publication statusPublished - Dec 1989
Externally publishedYes

Keywords

  • ISFET
  • PH sensor
  • Platinum oxide
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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