Piezoresistance properties of silicon carbide ceramics doped with trivalenet element and nitrogen

Translated title of the contribution: Piezoresistance properties of silicon carbide ceramics doped with trivalenet element and nitrogen

Akira Kishimoto, Yasuyuki Okada, Daisuke Mutaguchi, Hidetaka Hayashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Evaluation samples of p-type α-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide with boron, aluminum, or gallium at various ratios. The resultant p-type silicon carbide ceramics were doped with nitrogen by changing the post-HIP nitrogen gas pressure. The lattice parameter decreased with nitrogen doping pressure indicating that the incorporated nitrogen were dissolved into silicon carbide. In the case of boron and aluminum doped samples, the piezoresistive coefficient decreased with the nitrogen doping pressure, while gallium doped one remained almost constant with doping pressure.

Original languageJapanese
Pages (from-to)753-756
Number of pages4
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume52
Issue number10
DOIs
Publication statusPublished - Oct 1 2005

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ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Metals and Alloys
  • Materials Chemistry

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