Piezoresistance properties of α silicon carbide ceramics doped with nitrogen

Akira Kishimoto, Yoshimitsu Numata

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

α-silicon carbide ceramics with different nitrogen content were fabricated by changing the post-HIP nitrogen gas pressure. Resultant silicon carbide ceramics were all n-type semiconductors in which doped nitrogen played a role of donor. With the doping pressure up to 150 MPa, incorporated nitrogen were dissolved into silicon carbide. Lattice parameter, carrier concentration and piezoresistance coefficient changed in accordance with the solution content. Over 150 MPa, nitrogen incorporation continued to increase while nitrogen solution was saturated.

Original languageEnglish
Pages (from-to)346-349
Number of pages4
JournalFuntai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume51
Issue number5
Publication statusPublished - May 2004

Fingerprint

Silicon carbide
Nitrogen
Hot isostatic pressing
Lattice constants
Carrier concentration
silicon carbide
Gases
Doping (additives)
Semiconductor materials

Keywords

  • Donor
  • HIP
  • Nitrogen doping
  • Piezoresistance
  • Silicon carbide

ASJC Scopus subject areas

  • Mechanical Engineering
  • Metals and Alloys

Cite this

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