Piezoresistance properties of α silicon carbide ceramics doped with nitrogen

Akira Kishimoto; Yoshimitsu Numata

doi:10.2497/jjspm.51.346

Piezoresistance properties of α silicon carbide ceramics doped with nitrogen

Akira Kishimoto, Yoshimitsu Numata

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

α-silicon carbide ceramics with different nitrogen content were fabricated by changing the post-HIP nitrogen gas pressure. Resultant silicon carbide ceramics were all n-type semiconductors in which doped nitrogen played a role of donor. With the doping pressure up to 150 MPa, incorporated nitrogen were dissolved into silicon carbide. Lattice parameter, carrier concentration and piezoresistance coefficient changed in accordance with the solution content. Over 150 MPa, nitrogen incorporation continued to increase while nitrogen solution was saturated.

Original language	English
Pages (from-to)	346-349
Number of pages	4
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	51
Issue number	5
DOIs	https://doi.org/10.2497/jjspm.51.346
Publication status	Published - May 2004

Keywords

Donor
HIP
Nitrogen doping
Piezoresistance
Silicon carbide

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

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10.2497/jjspm.51.346

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abstract = "α-silicon carbide ceramics with different nitrogen content were fabricated by changing the post-HIP nitrogen gas pressure. Resultant silicon carbide ceramics were all n-type semiconductors in which doped nitrogen played a role of donor. With the doping pressure up to 150 MPa, incorporated nitrogen were dissolved into silicon carbide. Lattice parameter, carrier concentration and piezoresistance coefficient changed in accordance with the solution content. Over 150 MPa, nitrogen incorporation continued to increase while nitrogen solution was saturated.",

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AB - α-silicon carbide ceramics with different nitrogen content were fabricated by changing the post-HIP nitrogen gas pressure. Resultant silicon carbide ceramics were all n-type semiconductors in which doped nitrogen played a role of donor. With the doping pressure up to 150 MPa, incorporated nitrogen were dissolved into silicon carbide. Lattice parameter, carrier concentration and piezoresistance coefficient changed in accordance with the solution content. Over 150 MPa, nitrogen incorporation continued to increase while nitrogen solution was saturated.

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KW - Nitrogen doping

KW - Piezoresistance

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Piezoresistance properties of α silicon carbide ceramics doped with nitrogen

Abstract

Keywords

ASJC Scopus subject areas

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