Photovoltaic properties of boron-incorporated amorphous carbon on n-Si heterojunction grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron

Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Boron-incorporated hydrogenated amorphous carbon (a-C:H) thin film, which is thought to be promising for p-type conductivity, on n-type Si(100) heterojunction photovoltaic devices has been grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron. In order to identify the effect of boron incorporation, various CH4 partial pressures have been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% under 100 mW/cm2 have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron incorporated a-C:H film. The photovoltaic properties of the a-C:H-based heterojunction solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as the optical properties of boron-incorporated a-C:H film. The possibility of improving the conversion efficiency is also discussed.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number3 B
Publication statusPublished - Mar 15 2003
Externally publishedYes

Fingerprint

Amorphous carbon
Plasma enhanced chemical vapor deposition
Boron
Heterojunctions
heterojunctions
radio frequencies
boron
vapor deposition
carbon
Conversion efficiency
Solar cells
solar cells
dark current
Photocurrents
spectral sensitivity
Partial pressure
Light absorption
partial pressure
photocurrents
optical absorption

Keywords

  • Amorphous carbon
  • Boron incorporation
  • Photovoltaic characteristics
  • Radio frequency plasma-enhanced chemical vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Photovoltaic properties of boron-incorporated amorphous carbon on n-Si heterojunction grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron",
abstract = "Boron-incorporated hydrogenated amorphous carbon (a-C:H) thin film, which is thought to be promising for p-type conductivity, on n-type Si(100) heterojunction photovoltaic devices has been grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron. In order to identify the effect of boron incorporation, various CH4 partial pressures have been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04{\%} under 100 mW/cm2 have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron incorporated a-C:H film. The photovoltaic properties of the a-C:H-based heterojunction solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as the optical properties of boron-incorporated a-C:H film. The possibility of improving the conversion efficiency is also discussed.",
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author = "Yasuhiko Hayashi and Tetsuo Soga and Takashi Jimbo",
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T1 - Photovoltaic properties of boron-incorporated amorphous carbon on n-Si heterojunction grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron

AU - Hayashi, Yasuhiko

AU - Soga, Tetsuo

AU - Jimbo, Takashi

PY - 2003/3/15

Y1 - 2003/3/15

N2 - Boron-incorporated hydrogenated amorphous carbon (a-C:H) thin film, which is thought to be promising for p-type conductivity, on n-type Si(100) heterojunction photovoltaic devices has been grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron. In order to identify the effect of boron incorporation, various CH4 partial pressures have been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% under 100 mW/cm2 have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron incorporated a-C:H film. The photovoltaic properties of the a-C:H-based heterojunction solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as the optical properties of boron-incorporated a-C:H film. The possibility of improving the conversion efficiency is also discussed.

AB - Boron-incorporated hydrogenated amorphous carbon (a-C:H) thin film, which is thought to be promising for p-type conductivity, on n-type Si(100) heterojunction photovoltaic devices has been grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron. In order to identify the effect of boron incorporation, various CH4 partial pressures have been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% under 100 mW/cm2 have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron incorporated a-C:H film. The photovoltaic properties of the a-C:H-based heterojunction solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as the optical properties of boron-incorporated a-C:H film. The possibility of improving the conversion efficiency is also discussed.

KW - Amorphous carbon

KW - Boron incorporation

KW - Photovoltaic characteristics

KW - Radio frequency plasma-enhanced chemical vapor deposition

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