Photovoltaic properties of boron-incorporated amorphous carbon on n-Si heterojunction grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron

Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo

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4 Citations (Scopus)


Boron-incorporated hydrogenated amorphous carbon (a-C:H) thin film, which is thought to be promising for p-type conductivity, on n-type Si(100) heterojunction photovoltaic devices has been grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron. In order to identify the effect of boron incorporation, various CH4 partial pressures have been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% under 100 mW/cm2 have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron incorporated a-C:H film. The photovoltaic properties of the a-C:H-based heterojunction solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as the optical properties of boron-incorporated a-C:H film. The possibility of improving the conversion efficiency is also discussed.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number3 B
Publication statusPublished - Mar 15 2003
Externally publishedYes



  • Amorphous carbon
  • Boron incorporation
  • Photovoltaic characteristics
  • Radio frequency plasma-enhanced chemical vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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