Photovoltaic properties of boron-doped amorphous carbon on N-SI with C60 intermediate layer deposited by RF nitrogen plasma co-sputtering of graphite and boron

Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photovoltaic cells based on boron-doped amorphous carbon on n-Si with C60 intermediate thin layer between them have deposited by rf nitrogen plasma co-sputtering of graphite and boron targets in a UHV chamber. In order to identify the effect of rf input power of graphite sputtering, the rf power was varied between 15 W and 100 W by keeping that of boron was constant at 300 W. A p-type a-C/C60/n-Si heterojunction solar cells with conversion efficiency as high as 0.00015 % have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 400 nm and 700 nm are determined to be due to the optical absorption of the boron-doped a-C and C60 layers, respectively, based on the absorption peaks measured by UV-visible spectroscopy. The photovoltaic properties of the a-C based solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as optical properties of boron- doped a-C film.

Original languageEnglish
Title of host publicationProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages144-147
Number of pages4
VolumeA
Publication statusPublished - 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period5/11/035/18/03

Fingerprint

Nitrogen plasma
Amorphous carbon
Sputtering
Boron
Graphite
Solar cells
Photovoltaic cells
Photocurrents
Light absorption
Conversion efficiency
Heterojunctions
Current density
Optical properties
Spectroscopy
Wavelength
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hayashi, Y., Soga, T., & Jimbo, T. (2003). Photovoltaic properties of boron-doped amorphous carbon on N-SI with C60 intermediate layer deposited by RF nitrogen plasma co-sputtering of graphite and boron. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion (Vol. A, pp. 144-147)

Photovoltaic properties of boron-doped amorphous carbon on N-SI with C60 intermediate layer deposited by RF nitrogen plasma co-sputtering of graphite and boron. / Hayashi, Yasuhiko; Soga, Tetsuo; Jimbo, Takashi.

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. Vol. A 2003. p. 144-147.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hayashi, Y, Soga, T & Jimbo, T 2003, Photovoltaic properties of boron-doped amorphous carbon on N-SI with C60 intermediate layer deposited by RF nitrogen plasma co-sputtering of graphite and boron. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion. vol. A, pp. 144-147, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 5/11/03.
Hayashi Y, Soga T, Jimbo T. Photovoltaic properties of boron-doped amorphous carbon on N-SI with C60 intermediate layer deposited by RF nitrogen plasma co-sputtering of graphite and boron. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion. Vol. A. 2003. p. 144-147
Hayashi, Yasuhiko ; Soga, Tetsuo ; Jimbo, Takashi. / Photovoltaic properties of boron-doped amorphous carbon on N-SI with C60 intermediate layer deposited by RF nitrogen plasma co-sputtering of graphite and boron. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. Vol. A 2003. pp. 144-147
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abstract = "Photovoltaic cells based on boron-doped amorphous carbon on n-Si with C60 intermediate thin layer between them have deposited by rf nitrogen plasma co-sputtering of graphite and boron targets in a UHV chamber. In order to identify the effect of rf input power of graphite sputtering, the rf power was varied between 15 W and 100 W by keeping that of boron was constant at 300 W. A p-type a-C/C60/n-Si heterojunction solar cells with conversion efficiency as high as 0.00015 {\%} have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 400 nm and 700 nm are determined to be due to the optical absorption of the boron-doped a-C and C60 layers, respectively, based on the absorption peaks measured by UV-visible spectroscopy. The photovoltaic properties of the a-C based solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as optical properties of boron- doped a-C film.",
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AB - Photovoltaic cells based on boron-doped amorphous carbon on n-Si with C60 intermediate thin layer between them have deposited by rf nitrogen plasma co-sputtering of graphite and boron targets in a UHV chamber. In order to identify the effect of rf input power of graphite sputtering, the rf power was varied between 15 W and 100 W by keeping that of boron was constant at 300 W. A p-type a-C/C60/n-Si heterojunction solar cells with conversion efficiency as high as 0.00015 % have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 400 nm and 700 nm are determined to be due to the optical absorption of the boron-doped a-C and C60 layers, respectively, based on the absorption peaks measured by UV-visible spectroscopy. The photovoltaic properties of the a-C based solar cell structures are discussed with the dark and illuminated current density-voltage characteristics as well as optical properties of boron- doped a-C film.

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