Abstract
An attempt has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (1 0 0) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH4 partial pressure has been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the dark and illuminated J - V as well as optical properties of boron-doped a-C:H film.
| Original language | English |
|---|---|
| Pages (from-to) | 687-690 |
| Number of pages | 4 |
| Journal | Diamond and Related Materials |
| Volume | 12 |
| Issue number | 3-7 |
| DOIs | |
| Publication status | Published - Jan 1 2003 |
| Externally published | Yes |
Keywords
- Boron dope
- Diamond-like carbon
- Photovoltaic characteristics
- R.f. plasma-enhanced CVD
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering
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Hayashi, Y., Ishikawa, S., Soga, T., Umeno, M., & Jimbo, T. (2003). Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron. Diamond and Related Materials, 12(3-7), 687-690. https://doi.org/10.1016/S0925-9635(03)00031-1