Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron

Y. Hayashi, S. Ishikawa, T. Soga, M. Umeno, T. Jimbo

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

An attempt has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (1 0 0) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH4 partial pressure has been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the dark and illuminated J - V as well as optical properties of boron-doped a-C:H film.

Original languageEnglish
Pages (from-to)687-690
Number of pages4
JournalDiamond and Related Materials
Volume12
Issue number3-7
DOIs
Publication statusPublished - Jan 1 2003
Externally publishedYes

Keywords

  • Boron dope
  • Diamond-like carbon
  • Photovoltaic characteristics
  • R.f. plasma-enhanced CVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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