Abstract
An attempt has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (1 0 0) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH4 partial pressure has been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the dark and illuminated J - V as well as optical properties of boron-doped a-C:H film.
| Original language | English |
|---|---|
| Pages (from-to) | 687-690 |
| Number of pages | 4 |
| Journal | Diamond and Related Materials |
| Volume | 12 |
| Issue number | 3-7 |
| DOIs | |
| Publication status | Published - Mar 2003 |
| Externally published | Yes |
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Keywords
- Boron dope
- Diamond-like carbon
- Photovoltaic characteristics
- R.f. plasma-enhanced CVD
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron. / Hayashi, Yasuhiko; Ishikawa, S.; Soga, T.; Umeno, M.; Jimbo, T.
In: Diamond and Related Materials, Vol. 12, No. 3-7, 03.2003, p. 687-690.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron
AU - Hayashi, Yasuhiko
AU - Ishikawa, S.
AU - Soga, T.
AU - Umeno, M.
AU - Jimbo, T.
PY - 2003/3
Y1 - 2003/3
N2 - An attempt has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (1 0 0) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH4 partial pressure has been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the dark and illuminated J - V as well as optical properties of boron-doped a-C:H film.
AB - An attempt has been made on the device fabrication with boron-doped hydrogenated amorphous carbon (a-C:H) thin film deposited on n-type Si (1 0 0) by r.f. plasma-enhanced CVD. In order to identify the optimal doping condition, the various CH4 partial pressure has been examined. a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.04% have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film. The photovoltaic properties of the a-C:H based heterojunction solar cell structures are discussed with the dark and illuminated J - V as well as optical properties of boron-doped a-C:H film.
KW - Boron dope
KW - Diamond-like carbon
KW - Photovoltaic characteristics
KW - R.f. plasma-enhanced CVD
UR - http://www.scopus.com/inward/record.url?scp=0038529378&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038529378&partnerID=8YFLogxK
U2 - 10.1016/S0925-9635(03)00031-1
DO - 10.1016/S0925-9635(03)00031-1
M3 - Article
AN - SCOPUS:0038529378
VL - 12
SP - 687
EP - 690
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 3-7
ER -