Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target

X. M. Tian, M. Rusop, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.

Original languageEnglish
Pages (from-to)73-80
Number of pages8
JournalMolecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals
Volume386
Issue numberPART 1
DOIs
Publication statusPublished - Dec 1 2002
Externally publishedYes
EventProceedings of the First International Symposium on Nanocarbons - Nagano, Japan
Duration: Nov 14 2001Nov 16 2001

Keywords

  • Amorphous carbon
  • Boron doping
  • Graphite target
  • Heterojunction
  • Photovoltaic
  • Pulsed laser deposition
  • Solar cell

ASJC Scopus subject areas

  • Condensed Matter Physics

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