Abstract
This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.
Original language | English |
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Pages (from-to) | 73-80 |
Number of pages | 8 |
Journal | Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals |
Volume | 386 |
Issue number | PART 1 |
DOIs | |
Publication status | Published - 2002 |
Externally published | Yes |
Event | Proceedings of the First International Symposium on Nanocarbons - Nagano, Japan Duration: Nov 14 2001 → Nov 16 2001 |
Keywords
- Amorphous carbon
- Boron doping
- Graphite target
- Heterojunction
- Photovoltaic
- Pulsed laser deposition
- Solar cell
ASJC Scopus subject areas
- Condensed Matter Physics