Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target

X. M. Tian; M. Rusop; Y. Hayashi; T. Soga; T. Jimbo; M. Umeno

doi:10.1080/10587250290113222

Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target

X. M. Tian, M. Rusop, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, V_oc= 250 mV and short circuit current density, J_sc = 2.113 mA/cm² were obtained, when exposed to AM 1.5 illumination (100 mW/cm², 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.

Original language	English
Pages (from-to)	73-80
Number of pages	8
Journal	Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals
Volume	386
Issue number	PART 1
DOIs	https://doi.org/10.1080/10587250290113222
Publication status	Published - 2002
Externally published	Yes
Event	Proceedings of the First International Symposium on Nanocarbons - Nagano, Japan Duration: Nov 14 2001 → Nov 16 2001

Keywords

Amorphous carbon
Boron doping
Graphite target
Heterojunction
Photovoltaic
Pulsed laser deposition
Solar cell

ASJC Scopus subject areas

Condensed Matter Physics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1080/10587250290113222

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Tian, X. M., Rusop, M., Hayashi, Y., Soga, T., Jimbo, T., & Umeno, M. (2002). Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target. Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, 386(PART 1), 73-80. https://doi.org/10.1080/10587250290113222

Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target. / Tian, X. M.; Rusop, M.; Hayashi, Y. et al.

In: Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, Vol. 386, No. PART 1, 2002, p. 73-80.

Research output: Contribution to journal › Conference article › peer-review

Tian, XM, Rusop, M, Hayashi, Y, Soga, T, Jimbo, T & Umeno, M 2002, 'Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target', Molecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals, vol. 386, no. PART 1, pp. 73-80. https://doi.org/10.1080/10587250290113222

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abstract = "This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.",

keywords = "Amorphous carbon, Boron doping, Graphite target, Heterojunction, Photovoltaic, Pulsed laser deposition, Solar cell",

author = "Tian, {X. M.} and M. Rusop and Y. Hayashi and T. Soga and T. Jimbo and M. Umeno",

note = "Funding Information: This work was partly supported by the Japan Society for the Promotion of Science under the program ``Research for Future''.; Proceedings of the First International Symposium on Nanocarbons ; Conference date: 14-11-2001 Through 16-11-2001",

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doi = "10.1080/10587250290113222",

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AU - Tian, X. M.

AU - Rusop, M.

AU - Hayashi, Y.

AU - Soga, T.

AU - Jimbo, T.

AU - Umeno, M.

N1 - Funding Information: This work was partly supported by the Japan Society for the Promotion of Science under the program ``Research for Future''.

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N2 - This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.

AB - This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.

KW - Amorphous carbon

KW - Boron doping

KW - Graphite target

KW - Heterojunction

KW - Photovoltaic

KW - Pulsed laser deposition

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Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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