Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target

X. M. Tian, M. Rusop, Yasuhiko Hayashi, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.

Original languageEnglish
Pages (from-to)73-80
Number of pages8
JournalMolecular Crystals and Liquid Crystals Science and Technology Section A: Molecular Crystals and Liquid Crystals
Volume386
Issue numberPART 1
DOIs
Publication statusPublished - 2002
Externally publishedYes

Fingerprint

Boron
Graphite
Carbon films
Amorphous carbon
Amorphous films
Pulsed laser deposition
pulsed laser deposition
Solar cells
boron
graphite
carbon
Open circuit voltage
solar cells
Energy conversion
Short circuit currents
Conversion efficiency
Electric properties
Current density
X ray photoelectron spectroscopy
Optical properties

Keywords

  • Amorphous carbon
  • Boron doping
  • Graphite target
  • Heterojunction
  • Photovoltaic
  • Pulsed laser deposition
  • Solar cell

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

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title = "Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target",
abstract = "This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2{\%}, together with the fill factor, FF= 45{\%}. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.",
keywords = "Amorphous carbon, Boron doping, Graphite target, Heterojunction, Photovoltaic, Pulsed laser deposition, Solar cell",
author = "Tian, {X. M.} and M. Rusop and Yasuhiko Hayashi and T. Soga and T. Jimbo and M. Umeno",
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T1 - Photovoltaic characteristics of boron doped amorphous carbon films deposited by pulsed laser deposition using graphite target

AU - Tian, X. M.

AU - Rusop, M.

AU - Hayashi, Yasuhiko

AU - Soga, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 2002

Y1 - 2002

N2 - This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.

AB - This paper reports on the successful deposition of boron (B) doped carbon films (p-C(B)) and fabrication of p-C(B)/n-Si solar cells by pulsed laser deposition (PLD) technique at room temperature using graphite target. The B content in the film was determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.2-1.7 atomic percentage. The photovoltaic values of the device, a maximum open circuit voltage, Voc= 250 mV and short circuit current density, Jsc = 2.113 mA/cm2 were obtained, when exposed to AM 1.5 illumination (100 mW/cm2, 25°C). The maximum energy conversion efficiency was found tentatively to be about, η = 0.2%, together with the fill factor, FF= 45%. In this paper, the dependence of the B content on electrical and optical properties of the p-C(B) films and the photovoltaic characteristic of the p-C(B)/n-Si structure photovoltaic solar cells are discussed.

KW - Amorphous carbon

KW - Boron doping

KW - Graphite target

KW - Heterojunction

KW - Photovoltaic

KW - Pulsed laser deposition

KW - Solar cell

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