Photovoltaic cells based on boron-doped amorphous carbon on N-SI prepared by RF plasma-enhanced chemical vapor deposition using trimethylboron

Yasuhiko Hayashi, Tetsuo Soga, Takashi Jimbo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Photovoltaic cells based on boron-doped p-type amorphous carbon on n-Si have been synthesized by rf plasma-enhanced CVD using trimethylboron (TMB). In order to identify the optimal doping condition, various TMB/CH4 flow ratios have been investigated. A p-type a-C:H/n-Si heterojunction solar cells with a conversion efficiency as high as 0.007 % have been fabricated. The spectral response of cell photocurrents in the short wavelength region below 700 nm is determined to be due to the optical absorption of the boron-doped a-C:H film based on the optical gap measured by UV-visible spectroscopy. The photovoltaic properties of the a-C:H based solar cell structures are discussed with the dark and illuminated current density-voltage characteristics (efficiency, short-circuit current, open-circuit voltage, fill factor and series resistance) as well as optical properties of boron-doped a-C:H film characterized by UV-visible spectroscopy.

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages151-154
Number of pages4
Publication statusPublished - Dec 1 2003
Externally publishedYes
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/TerritoryJapan
CityOsaka
Period5/11/035/18/03

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Photovoltaic cells based on boron-doped amorphous carbon on N-SI prepared by RF plasma-enhanced chemical vapor deposition using trimethylboron'. Together they form a unique fingerprint.

Cite this