Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy

S. Emura, K. Higashi, A. Itadani, H. Torigoe, Yasushige Kuroda, A. Nishikawa, Y. Fujiwara, H. Asahi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

X-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages15-20
Number of pages6
Volume1342
DOIs
Publication statusPublished - 2012
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/25/114/29/11

Fingerprint

Vapor phase epitaxy
Organometallics
vapor phase epitaxy
Luminescence
Photoluminescence
luminescence
nonresonance
photoluminescence
X rays
excitation
x rays
occurrences
Ions
Wavelength
wavelengths
ions

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Emura, S., Higashi, K., Itadani, A., Torigoe, H., Kuroda, Y., Nishikawa, A., ... Asahi, H. (2012). Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy. In Materials Research Society Symposium Proceedings (Vol. 1342, pp. 15-20) https://doi.org/10.1557/opl.2011.1241

Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy. / Emura, S.; Higashi, K.; Itadani, A.; Torigoe, H.; Kuroda, Yasushige; Nishikawa, A.; Fujiwara, Y.; Asahi, H.

Materials Research Society Symposium Proceedings. Vol. 1342 2012. p. 15-20.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Emura, S, Higashi, K, Itadani, A, Torigoe, H, Kuroda, Y, Nishikawa, A, Fujiwara, Y & Asahi, H 2012, Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy. in Materials Research Society Symposium Proceedings. vol. 1342, pp. 15-20, 2011 MRS Spring Meeting, San Francisco, CA, United States, 4/25/11. https://doi.org/10.1557/opl.2011.1241
Emura S, Higashi K, Itadani A, Torigoe H, Kuroda Y, Nishikawa A et al. Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy. In Materials Research Society Symposium Proceedings. Vol. 1342. 2012. p. 15-20 https://doi.org/10.1557/opl.2011.1241
Emura, S. ; Higashi, K. ; Itadani, A. ; Torigoe, H. ; Kuroda, Yasushige ; Nishikawa, A. ; Fujiwara, Y. ; Asahi, H. / Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy. Materials Research Society Symposium Proceedings. Vol. 1342 2012. pp. 15-20
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