Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy

S. Emura, K. Higashi, A. Itadani, H. Torigoe, Y. Kuroda, A. Nishikawa, Y. Fujiwara, H. Asahi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

X-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.

Original languageEnglish
Title of host publicationRare-Earth Doping of Advanced Materials for Photonic Applications - 2011
Pages15-20
Number of pages6
DOIs
Publication statusPublished - Jan 1 2012
Event2011 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 25 2011Apr 29 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1342
ISSN (Print)0272-9172

Other

Other2011 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/25/114/29/11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Emura, S., Higashi, K., Itadani, A., Torigoe, H., Kuroda, Y., Nishikawa, A., Fujiwara, Y., & Asahi, H. (2012). Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxy. In Rare-Earth Doping of Advanced Materials for Photonic Applications - 2011 (pp. 15-20). (Materials Research Society Symposium Proceedings; Vol. 1342). https://doi.org/10.1557/opl.2011.1241