Abstract
We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 μm was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain.
Original language | English |
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Pages (from-to) | 3615-3619 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 92 |
Issue number | 7 |
DOIs | |
Publication status | Published - Oct 1 2002 |
ASJC Scopus subject areas
- Physics and Astronomy(all)