Photoluminescence of Er in strained Si on SiGe layer

T. Ishiyama; S. Nawae; T. Komai; Y. Yamashita; Y. Kamiura; T. Hasegawa; K. Inoue; K. Okuno

doi:10.1063/1.1506391

Photoluminescence of Er in strained Si on SiGe layer

T. Ishiyama, S. Nawae, T. Komai, Y. Yamashita, Y. Kamiura, T. Hasegawa, K. Inoue, K. Okuno

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Abstract

We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 μm was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain.

Original language	English
Pages (from-to)	3615-3619
Number of pages	5
Journal	Journal of Applied Physics
Volume	92
Issue number	7
DOIs	https://doi.org/10.1063/1.1506391
Publication status	Published - Oct 1 2002

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Photoluminescence of Er in strained Si on SiGe layer",

abstract = "We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 μm was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain.",

author = "T. Ishiyama and S. Nawae and T. Komai and Y. Yamashita and Y. Kamiura and T. Hasegawa and K. Inoue and K. Okuno",

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TY - JOUR

T1 - Photoluminescence of Er in strained Si on SiGe layer

AU - Ishiyama, T.

AU - Nawae, S.

AU - Komai, T.

AU - Yamashita, Y.

AU - Kamiura, Y.

AU - Hasegawa, T.

AU - Inoue, K.

AU - Okuno, K.

PY - 2002/10/1

Y1 - 2002/10/1

N2 - We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 μm was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain.

AB - We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 μm was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -

Photoluminescence of Er in strained Si on SiGe layer

Abstract

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