Abstract
We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 μm was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain.
| Original language | English |
|---|---|
| Pages (from-to) | 3615-3619 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 92 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Oct 1 2002 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Ishiyama, T., Nawae, S., Komai, T., Yamashita, Y., Kamiura, Y., Hasegawa, T., Inoue, K., & Okuno, K. (2002). Photoluminescence of Er in strained Si on SiGe layer. Journal of Applied Physics, 92(7), 3615-3619. https://doi.org/10.1063/1.1506391