Photoluminescence of Er in strained Si on SiGe layer

T. Ishiyama, S. Nawae, T. Komai, Y. Yamashita, Y. Kamiura, T. Hasegawa, K. Inoue, K. Okuno

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10 Citations (Scopus)


We studied photoluminescence of Er in strained Si on a SiGe layer (Si:Er:O/SiGe) and unstrained Si on a Si layer (Si:Er:O/Si) grown by molecular beam epitaxy. Er-related photoluminescence was observed in both Si:Er:O/SiGe and Si:Er:O/Si samples. The peak intensity of Si:Er:O/SiGe at 1.54 μm was higher than that of Si:Er:O/Si. Moreover, the spectrum of strained Si (Si:Er:O/SiGe) was much broader than that of unstrained Si (Si:Er:O/Si). These differences between Si:Er:O/SiGe and Si:Er:O/Si suggest that the optical activation of Er can be enhanced by the presence of strain.

Original languageEnglish
Pages (from-to)3615-3619
Number of pages5
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - Oct 1 2002

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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