Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)124-125
Number of pages2
JournalProceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations
Publication statusPublished - 2002

Cite this

@article{fe42be292ba0481290ff2a33be529675,
title = "Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy",
author = "Yoshifumi Yamashita",
year = "2002",
language = "English",
pages = "124--125",
journal = "Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations",

}

TY - JOUR

T1 - Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy

AU - Yamashita, Yoshifumi

PY - 2002

Y1 - 2002

M3 - Article

SP - 124

EP - 125

JO - Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations

JF - Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations

ER -