Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy

Yoshifumi Yamashita

Research output: Contribution to journal › Article

Original languageEnglish
Pages (from-to)124-125
Number of pages2
JournalProceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations
Publication statusPublished - 2002

Cite this

Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy. / Yamashita, Yoshifumi.

In: Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations, 2002, p. 124-125.

Research output: Contribution to journal › Article

Yamashita, Y 2002, 'Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy', Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations, pp. 124-125.
Yamashita Y. Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy. Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations. 2002;124-125.
Yamashita, Yoshifumi. / Photoluminescence of Er-doped Si film on SiGe layer grown by molecular beam epitaxy. In: Proceedings of International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations. 2002 ; pp. 124-125.
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