Abstract
Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.
Original language | English |
---|---|
Pages (from-to) | 2950-2952 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 14 |
DOIs | |
Publication status | Published - Oct 4 2004 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)