Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)