Photogenerated hole carrier injection to YBa2Cu 3O7-x in an oxide heterostructure

Y. Muraoka; T. Muramatsu; J. Yamaura; Z. Hiroi

doi:10.1063/1.1803616

Photogenerated hole carrier injection to YBa₂Cu ₃O_7-x in an oxide heterostructure

Y. Muraoka, T. Muramatsu, J. Yamaura, Z. Hiroi

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

Hole doping in the YBa₂Cu₃O_7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa₂Cu₃O_7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*10¹³ cm^-2 at L=44 mW/cm². The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.

Original language	English
Pages (from-to)	2950-2952
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	14
DOIs	https://doi.org/10.1063/1.1803616
Publication status	Published - Oct 4 2004
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.",

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AU - Yamaura, J.

AU - Hiroi, Z.

PY - 2004/10/4

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N2 - Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.

AB - Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.

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