Abstract
Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.
| Original language | English |
|---|---|
| Pages (from-to) | 2950-2952 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - Oct 4 2004 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'Photogenerated hole carrier injection to YBa<sub>2</sub>Cu <sub>3</sub>O<sub>7-x</sub> in an oxide heterostructure'. Together they form a unique fingerprint.
Cite this
Muraoka, Y., Muramatsu, T., Yamaura, J., & Hiroi, Z. (2004). Photogenerated hole carrier injection to YBa2Cu 3O7-x in an oxide heterostructure. Applied Physics Letters, 85(14), 2950-2952. https://doi.org/10.1063/1.1803616