Photogenerated hole carrier injection to YBa2Cu 3O7-x in an oxide heterostructure

Yuji Muraoka, T. Muramatsu, J. Yamaura, Z. Hiroi

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Hole doping in the YBa2Cu3O7-X in an oxide heterostructure was analyzed. The current-voltage and photovoltaic properties of YBa2Cu3O7-X were also observed under ultraviolet light irradiation at room temperature. The maximum surface hole carrier density injected was found to be 3.5*1013 cm-2 at L=44 mW/cm2. The results show that the photocarrier injection technique could be used in transition metal oxides to control the hole carrier density.

Original languageEnglish
Pages (from-to)2950-2952
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number14
DOIs
Publication statusPublished - Oct 4 2004
Externally publishedYes

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carrier injection
oxides
ultraviolet radiation
metal oxides
transition metals
injection
irradiation
electric potential
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photogenerated hole carrier injection to YBa2Cu 3O7-x in an oxide heterostructure. / Muraoka, Yuji; Muramatsu, T.; Yamaura, J.; Hiroi, Z.

In: Applied Physics Letters, Vol. 85, No. 14, 04.10.2004, p. 2950-2952.

Research output: Contribution to journalArticle

Muraoka, Yuji ; Muramatsu, T. ; Yamaura, J. ; Hiroi, Z. / Photogenerated hole carrier injection to YBa2Cu 3O7-x in an oxide heterostructure. In: Applied Physics Letters. 2004 ; Vol. 85, No. 14. pp. 2950-2952.
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