Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond

H. Okazaki, T. Arakane, K. Sugawara, T. Sato, T. Takahashi, Takanori Wakita, M. Hirai, Yuji Muraoka, Y. Takano, S. Ishii, S. Iriyama, H. Kawarada, Takayoshi Yokoya

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.

Original languageEnglish
Pages (from-to)582-584
Number of pages3
JournalJournal of Physics and Chemistry of Solids
Volume72
Issue number5
DOIs
Publication statusPublished - May 2011

Fingerprint

Diamond
Photoemission
Photoelectron spectroscopy
Electron transitions
Ultraviolet spectroscopy
Electronic structure
Diamonds
photoelectric emission
diamonds
electronic structure
Valence bands
Carrier concentration
Semiconductor device models
spectroscopy
valence
Diamond films
Electronic states
Theophylline
Fermi level
diamond films

Keywords

  • A. Semiconductors
  • A. Superconductors
  • C. Photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)

Cite this

Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond. / Okazaki, H.; Arakane, T.; Sugawara, K.; Sato, T.; Takahashi, T.; Wakita, Takanori; Hirai, M.; Muraoka, Yuji; Takano, Y.; Ishii, S.; Iriyama, S.; Kawarada, H.; Yokoya, Takayoshi.

In: Journal of Physics and Chemistry of Solids, Vol. 72, No. 5, 05.2011, p. 582-584.

Research output: Contribution to journal › Article

Okazaki, H, Arakane, T, Sugawara, K, Sato, T, Takahashi, T, Wakita, T, Hirai, M, Muraoka, Y, Takano, Y, Ishii, S, Iriyama, S, Kawarada, H & Yokoya, T 2011, 'Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond', Journal of Physics and Chemistry of Solids, vol. 72, no. 5, pp. 582-584. https://doi.org/10.1016/j.jpcs.2010.10.052
Okazaki H, Arakane T, Sugawara K, Sato T, Takahashi T, Wakita T et al. Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond. Journal of Physics and Chemistry of Solids. 2011 May;72(5):582-584. https://doi.org/10.1016/j.jpcs.2010.10.052
Okazaki, H. ; Arakane, T. ; Sugawara, K. ; Sato, T. ; Takahashi, T. ; Wakita, Takanori ; Hirai, M. ; Muraoka, Yuji ; Takano, Y. ; Ishii, S. ; Iriyama, S. ; Kawarada, H. ; Yokoya, Takayoshi. / Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond. In: Journal of Physics and Chemistry of Solids. 2011 ; Vol. 72, No. 5. pp. 582-584.
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