Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond

H. Okazaki; T. Arakane; K. Sugawara; T. Sato; T. Takahashi; T. Wakita; M. Hirai; Y. Muraoka; Y. Takano; S. Ishii; S. Iriyama; H. Kawarada; T. Yokoya

doi:10.1016/j.jpcs.2010.10.052

Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond

H. Okazaki, T. Arakane, K. Sugawara, T. Sato, T. Takahashi, T. Wakita, M. Hirai, Y. Muraoka, Y. Takano, S. Ishii, S. Iriyama, H. Kawarada, T. Yokoya

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (E_F) up to ∼5k_BT can be observed (k_B is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near E_F. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of E_F, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.

Original language	English
Pages (from-to)	582-584
Number of pages	3
Journal	Journal of Physics and Chemistry of Solids
Volume	72
Issue number	5
DOIs	https://doi.org/10.1016/j.jpcs.2010.10.052
Publication status	Published - May 2011

Keywords

A. Semiconductors
A. Superconductors
C. Photoelectron spectroscopy

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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Okazaki, H., Arakane, T., Sugawara, K., Sato, T., Takahashi, T., Wakita, T., Hirai, M., Muraoka, Y., Takano, Y., Ishii, S., Iriyama, S., Kawarada, H., & Yokoya, T. (2011). Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond. Journal of Physics and Chemistry of Solids, 72(5), 582-584. https://doi.org/10.1016/j.jpcs.2010.10.052

Okazaki, H, Arakane, T, Sugawara, K, Sato, T, Takahashi, T, Wakita, T, Hirai, M, Muraoka, Y, Takano, Y, Ishii, S, Iriyama, S, Kawarada, H & Yokoya, T 2011, 'Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond', Journal of Physics and Chemistry of Solids, vol. 72, no. 5, pp. 582-584. https://doi.org/10.1016/j.jpcs.2010.10.052

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title = "Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond",

abstract = "We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.",

keywords = "A. Semiconductors, A. Superconductors, C. Photoelectron spectroscopy",

author = "H. Okazaki and T. Arakane and K. Sugawara and T. Sato and T. Takahashi and T. Wakita and M. Hirai and Y. Muraoka and Y. Takano and S. Ishii and S. Iriyama and H. Kawarada and T. Yokoya",

note = "Funding Information: This work was supported partly by a Grant-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science, and Technology, Japan ( 20340091 ). ",

year = "2011",

month = may,

doi = "10.1016/j.jpcs.2010.10.052",

language = "English",

volume = "72",

pages = "582--584",

journal = "Journal of Physics and Chemistry of Solids",

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AU - Okazaki, H.

AU - Arakane, T.

AU - Sugawara, K.

AU - Sato, T.

AU - Takahashi, T.

AU - Wakita, T.

AU - Hirai, M.

AU - Muraoka, Y.

AU - Takano, Y.

AU - Ishii, S.

AU - Iriyama, S.

AU - Kawarada, H.

AU - Yokoya, T.

N1 - Funding Information: This work was supported partly by a Grant-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science, and Technology, Japan ( 20340091 ).

PY - 2011/5

Y1 - 2011/5

N2 - We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.

AB - We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.

KW - A. Semiconductors

KW - A. Superconductors

KW - C. Photoelectron spectroscopy

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EP - 584

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

SN - 0022-3697

IS - 5

ER -

Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond

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Keywords

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