Abstract
We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.
Original language | English |
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Pages (from-to) | 582-584 |
Number of pages | 3 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 72 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2011 |
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Keywords
- A. Semiconductors
- A. Superconductors
- C. Photoelectron spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Science(all)
Cite this
Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond. / Okazaki, H.; Arakane, T.; Sugawara, K.; Sato, T.; Takahashi, T.; Wakita, Takanori; Hirai, M.; Muraoka, Yuji; Takano, Y.; Ishii, S.; Iriyama, S.; Kawarada, H.; Yokoya, Takayoshi.
In: Journal of Physics and Chemistry of Solids, Vol. 72, No. 5, 05.2011, p. 582-584.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoemission study of electronic structure evolution across the metalinsulator transition of heavily B-doped diamond
AU - Okazaki, H.
AU - Arakane, T.
AU - Sugawara, K.
AU - Sato, T.
AU - Takahashi, T.
AU - Wakita, Takanori
AU - Hirai, M.
AU - Muraoka, Yuji
AU - Takano, Y.
AU - Ishii, S.
AU - Iriyama, S.
AU - Kawarada, H.
AU - Yokoya, Takayoshi
PY - 2011/5
Y1 - 2011/5
N2 - We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.
AB - We studied the electronic structure evolution of heavily B-doped diamond films across the metalinsulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From higherature UPS, through which electronic states near the Fermi level (EF) up to ∼5kBT can be observed (kB is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near EF. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of EF, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.
KW - A. Semiconductors
KW - A. Superconductors
KW - C. Photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=79955756853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79955756853&partnerID=8YFLogxK
U2 - 10.1016/j.jpcs.2010.10.052
DO - 10.1016/j.jpcs.2010.10.052
M3 - Article
AN - SCOPUS:79955756853
VL - 72
SP - 582
EP - 584
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 5
ER -