Photoemission spectroscopy of Ta 2NiSe 5

Y. Wakisaka, T. Sudayama, K. Takubo, T. Mizokawa, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi

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33 Citations (Scopus)

Abstract

We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

Original languageEnglish
Pages (from-to)1231-1234
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume25
Issue number5
DOIs
Publication statusPublished - Jul 1 2012
Externally publishedYes

Keywords

  • Excitonic insulator
  • Layered chalcogenide
  • Photoemission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Wakisaka, Y., Sudayama, T., Takubo, K., Mizokawa, T., Saini, N. L., Arita, M., Namatame, H., Taniguchi, M., Katayama, N., Nohara, M., & Takagi, H. (2012). Photoemission spectroscopy of Ta 2NiSe 5 Journal of Superconductivity and Novel Magnetism, 25(5), 1231-1234. https://doi.org/10.1007/s10948-012-1526-0