Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate

Hideki Fukano, Manabu Mitsuhara, Yasuhiro Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the growth and fabrication of a photodiode using InGaAsN on InP. A low residual carrier concentration is achieved using a low RF power plasma source. The fabricated photodiode has a 2.1-μm cutoff wavelength.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages294-295
Number of pages2
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States
Duration: Nov 9 2008Nov 13 2008

Other

Other21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
CountryUnited States
CityNewport Beach, CA
Period11/9/0811/13/08

Fingerprint

Photodiodes
Wavelength
Plasma sources
Substrates
Carrier concentration
Fabrication

Keywords

  • InGaAsN
  • Metalorganic molecular beam epitaxy
  • Photodiode
  • RF plasma

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Fukano, H., Mitsuhara, M., & Kondo, Y. (2008). Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp. 294-295). [4688606] https://doi.org/10.1109/LEOS.2008.4688606

Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. / Fukano, Hideki; Mitsuhara, Manabu; Kondo, Yasuhiro.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2008. p. 294-295 4688606.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fukano, H, Mitsuhara, M & Kondo, Y 2008, Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS., 4688606, pp. 294-295, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008, Newport Beach, CA, United States, 11/9/08. https://doi.org/10.1109/LEOS.2008.4688606
Fukano H, Mitsuhara M, Kondo Y. Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2008. p. 294-295. 4688606 https://doi.org/10.1109/LEOS.2008.4688606
Fukano, Hideki ; Mitsuhara, Manabu ; Kondo, Yasuhiro. / Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2008. pp. 294-295
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