Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate

Hideki Fukano, Manabu Mitsuhara, Yasuhiro Kondo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the growth and fabrication of a photodiode using InGaAsN on InP. A low residual carrier concentration is achieved using a low RF power plasma source. The fabricated photodiode has a 2.1-μm cutoff wavelength.

Original languageEnglish
Title of host publication21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
Pages294-295
Number of pages2
DOIs
Publication statusPublished - Dec 1 2008
Externally publishedYes
Event21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States
Duration: Nov 9 2008Nov 13 2008

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Other

Other21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
CountryUnited States
CityNewport Beach, CA
Period11/9/0811/13/08

Keywords

  • InGaAsN
  • Metalorganic molecular beam epitaxy
  • Photodiode
  • RF plasma

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Fukano, H., Mitsuhara, M., & Kondo, Y. (2008). Photodiode operating at 2 μm wavelength using InGaAsN layer on InP substrate. In 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 (pp. 294-295). [4688606] (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2008.4688606