Abstract
An efficient and clean method of doping transition metal oxides (TMOs) with hole carriers is presented. We have fabricated oxide heterostructures made of various TMO thin films grown on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. It is shown that the resistance of the insulating TMOs is reduced significantly with increasing light irradiance, as a result of photoinduced hole carrier injection from the titanium oxide substrates. A generic band structure for the heterojunctions is proposed, in which a large potential slope and a small barrier exist near the interface for photoinduced holes and electrons in the titanium oxides, respectively. This photocarrier injection (PCI) technique would provide us with a useful method to achieve the external control of hole carrier density in TMOs.
| Original language | English |
|---|---|
| Pages (from-to) | 781-784 |
| Number of pages | 4 |
| Journal | Journal of the Physical Society of Japan |
| Volume | 72 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2003 |
| Externally published | Yes |
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Keywords
- CaCuO
- Heterojunction
- Manganese perovskite
- Photocarrier injection
- SrTiO
- TiO
- Transition metal oxides
- VO
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Photocarrier injection to transition metal oxides. / Muraoka, Yuji; Hiroi, Zenji.
In: Journal of the Physical Society of Japan, Vol. 72, No. 4, 04.2003, p. 781-784.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photocarrier injection to transition metal oxides
AU - Muraoka, Yuji
AU - Hiroi, Zenji
PY - 2003/4
Y1 - 2003/4
N2 - An efficient and clean method of doping transition metal oxides (TMOs) with hole carriers is presented. We have fabricated oxide heterostructures made of various TMO thin films grown on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. It is shown that the resistance of the insulating TMOs is reduced significantly with increasing light irradiance, as a result of photoinduced hole carrier injection from the titanium oxide substrates. A generic band structure for the heterojunctions is proposed, in which a large potential slope and a small barrier exist near the interface for photoinduced holes and electrons in the titanium oxides, respectively. This photocarrier injection (PCI) technique would provide us with a useful method to achieve the external control of hole carrier density in TMOs.
AB - An efficient and clean method of doping transition metal oxides (TMOs) with hole carriers is presented. We have fabricated oxide heterostructures made of various TMO thin films grown on n-type titanium oxide substrates, and measured in-plane resistance under ultraviolet light irradiation. It is shown that the resistance of the insulating TMOs is reduced significantly with increasing light irradiance, as a result of photoinduced hole carrier injection from the titanium oxide substrates. A generic band structure for the heterojunctions is proposed, in which a large potential slope and a small barrier exist near the interface for photoinduced holes and electrons in the titanium oxides, respectively. This photocarrier injection (PCI) technique would provide us with a useful method to achieve the external control of hole carrier density in TMOs.
KW - CaCuO
KW - Heterojunction
KW - Manganese perovskite
KW - Photocarrier injection
KW - SrTiO
KW - TiO
KW - Transition metal oxides
KW - VO
UR - http://www.scopus.com/inward/record.url?scp=0038323314&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038323314&partnerID=8YFLogxK
U2 - 10.1143/JPSJ.72.781
DO - 10.1143/JPSJ.72.781
M3 - Article
AN - SCOPUS:0038323314
VL - 72
SP - 781
EP - 784
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 4
ER -