Photocarrier injection and the I-V characteristics of La 0.8Sr0.2MnO3/SrTiO3:Nb heterojunctions

Takaki Muramatsu, Yuji Muraoka, Zenji Hiroi

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


Oxide heterojunctions made of p-type La0.8Sr 0.2MnO3 (LSMO) and niobium-doped n-type SrTiO3 (STO:Nb) have been fabricated by the pulsed laser deposition (PLD) technique and characterized under UV light irradiation by measuring the current-voltage, photovoltaic properties and the junction capacitance. It is shown that the heterojunctions work as an efficient UV photodiode, in which photogenerated holes in the STO:Nb substrate are injected to the LSMO film. The maximum surface hole density Q/e and external quantum efficiency γ are estimated to be 8.3 × 1012 cm-2 and 11% at room temperature, respectively. They are improved significantly in a p-i-n junction of LSMO/STO/STO:Nb, where Q/e and γ are 3.0 × 1013 cm -2 and 27%. respectively.

Original languageEnglish
Pages (from-to)351-354
Number of pages4
JournalSolid State Communications
Issue number5
Publication statusPublished - Nov 1 2004
Externally publishedYes


  • A. Heterojunctions
  • A. Thin films
  • D. Photoconductivity und photovoltaics

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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