Photocarrier injection and current-voltage characteristics of la 0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature

Takaki Muramatsu; Yuji Muraoka; Zenji Hiroi

doi:10.1143/JJAP.44.7367

Photocarrier injection and current-voltage characteristics of la _0.8Sr_0.2MnO₃/SrTiO₃:Nb heterojunction at low temperature

Takaki Muramatsu, Yuji Muraoka, Zenji Hiroi

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

An epitaxial heterojunction made of a p-type perovskite manganite La _0.8Sr_0.2MnO₃ film and an n-type strontium titanate SrTiO₃:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 10¹³cm^-2.

Original language	English
Pages (from-to)	7367-7371
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7367
Publication status	Published - Oct 11 2005
Externally published	Yes

Keywords

Heterojunction
Perovskite manganite
Photocarrier injection
Photodiode
Photovoltaic effect
Strontium titanate

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1143/JJAP.44.7367

Cite this

Photocarrier injection and current-voltage characteristics of la _0.8Sr_0.2MnO₃/SrTiO₃:Nb heterojunction at low temperature. / Muramatsu, Takaki; Muraoka, Yuji; Hiroi, Zenji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 10, 11.10.2005, p. 7367-7371.

Research output: Contribution to journal › Article › peer-review

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abstract = "An epitaxial heterojunction made of a p-type perovskite manganite La 0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 1013cm-2.",

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