Photocarrier injection and current-voltage characteristics of la 0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature

Takaki Muramatsu; Yuji Muraoka; Zenji Hiroi

doi:10.1143/JJAP.44.7367

Photocarrier injection and current-voltage characteristics of la _0.8Sr_0.2MnO₃/SrTiO₃:Nb heterojunction at low temperature

Takaki Muramatsu, Yuji Muraoka, Zenji Hiroi

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

An epitaxial heterojunction made of a p-type perovskite manganite La _0.8Sr_0.2MnO₃ film and an n-type strontium titanate SrTiO₃:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 10¹³cm^-2.

Original language	English
Pages (from-to)	7367-7371
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7367
Publication status	Published - Oct 11 2005
Externally published	Yes

Keywords

Heterojunction
Perovskite manganite
Photocarrier injection
Photodiode
Photovoltaic effect
Strontium titanate

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

Access to Document

10.1143/JJAP.44.7367

Fingerprint Dive into the research topics of 'Photocarrier injection and current-voltage characteristics of la 0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature'. Together they form a unique fingerprint.

Cite this

Photocarrier injection and current-voltage characteristics of la _0.8Sr_0.2MnO₃/SrTiO₃:Nb heterojunction at low temperature. / Muramatsu, Takaki; Muraoka, Yuji; Hiroi, Zenji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 10, 11.10.2005, p. 7367-7371.

Research output: Contribution to journal › Article › peer-review

@article{92127469a55746adb53bdd3ee4dfb4d2,

title = "Photocarrier injection and current-voltage characteristics of la 0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature",

abstract = "An epitaxial heterojunction made of a p-type perovskite manganite La 0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 1013cm-2.",

keywords = "Heterojunction, Perovskite manganite, Photocarrier injection, Photodiode, Photovoltaic effect, Strontium titanate",

author = "Takaki Muramatsu and Yuji Muraoka and Zenji Hiroi",

year = "2005",

month = oct,

day = "11",

doi = "10.1143/JJAP.44.7367",

language = "English",

volume = "44",

pages = "7367--7371",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "INSTITUTE OF PURE AND APPLIED PHYSICS",

number = "10",

}

TY - JOUR

T1 - Photocarrier injection and current-voltage characteristics of la 0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature

AU - Muramatsu, Takaki

AU - Muraoka, Yuji

AU - Hiroi, Zenji

PY - 2005/10/11

Y1 - 2005/10/11

N2 - An epitaxial heterojunction made of a p-type perovskite manganite La 0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 1013cm-2.

AB - An epitaxial heterojunction made of a p-type perovskite manganite La 0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 1013cm-2.

KW - Heterojunction

KW - Perovskite manganite

KW - Photocarrier injection

KW - Photodiode

KW - Photovoltaic effect

KW - Strontium titanate

UR - http://www.scopus.com/inward/record.url?scp=31644449832&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31644449832&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.7367

DO - 10.1143/JJAP.44.7367

M3 - Article

AN - SCOPUS:31644449832

VL - 44

SP - 7367

EP - 7371

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -