Photocarrier injection and current-voltage characteristics of la 0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature

Takaki Muramatsu; Yuji Muraoka; Zenji Hiroi

doi:10.1143/JJAP.44.7367

Photocarrier injection and current-voltage characteristics of la _0.8Sr_0.2MnO₃/SrTiO₃:Nb heterojunction at low temperature

Takaki Muramatsu, Yuji Muraoka, Zenji Hiroi

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

An epitaxial heterojunction made of a p-type perovskite manganite La _0.8Sr_0.2MnO₃ film and an n-type strontium titanate SrTiO₃:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 10¹³cm^-2.

Original language	English
Pages (from-to)	7367-7371
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7367
Publication status	Published - Oct 11 2005
Externally published	Yes

Keywords

Heterojunction
Perovskite manganite
Photocarrier injection
Photodiode
Photovoltaic effect
Strontium titanate

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Photocarrier injection and current-voltage characteristics of la _0.8Sr_0.2MnO₃/SrTiO₃:Nb heterojunction at low temperature. / Muramatsu, Takaki; Muraoka, Yuji; Hiroi, Zenji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 10, 11.10.2005, p. 7367-7371.

Research output: Contribution to journal › Article › peer-review

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