Abstract
An epitaxial heterojunction made of a p-type perovskite manganite La 0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 1013cm-2.
Original language | English |
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Pages (from-to) | 7367-7371 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 10 |
DOIs | |
Publication status | Published - Oct 11 2005 |
Externally published | Yes |
Keywords
- Heterojunction
- Perovskite manganite
- Photocarrier injection
- Photodiode
- Photovoltaic effect
- Strontium titanate
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)