Photocarrier injection and current-voltage characteristics of la 0.8Sr0.2MnO3/SrTiO3:Nb heterojunction at low temperature

Takaki Muramatsu, Yuji Muraoka, Zenji Hiroi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


An epitaxial heterojunction made of a p-type perovskite manganite La 0.8Sr0.2MnO3 film and an n-type strontium titanate SrTiO3:Nb substrate has been fabricated by the pulsed laser deposition technique. The current-voltage (1-V) characteristics and photovoltaic properties are measured under UV light irradiation in a wide temperature range down to 10K. It is found that the junction acts as an efficient UV photodiode with a large external quantum efficiency of 28%. It is also demonstrated that the manganite film can be doped with a certain amount of holes by photocarrier injection. The maximum surface hole density is estimated to be 3.0 × 1013cm-2.

Original languageEnglish
Pages (from-to)7367-7371
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number10
Publication statusPublished - Oct 11 2005
Externally publishedYes


  • Heterojunction
  • Perovskite manganite
  • Photocarrier injection
  • Photodiode
  • Photovoltaic effect
  • Strontium titanate

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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