Photocarrier-injected electronic structure of v O2/Ti O 2: Nb

R. Eguchi, S. Shin, A. Fukushima, T. Kiss, T. Shimojima, Y. Muraoka, Z. Hiroi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We study the effect of photocarrier injection on the electronic structure of V O2 Ti O2: Nb thin films using photoemission spectroscopy. The results indicate that the valence band and core electronic states of V O2 shift systematically to lower binding energy upon photocarrier injection, consistent with doping in a rigid-band picture. The shift in binding energy, and its saturation, follows the known photovoltage behavior. In addition, the V 3d states near EF exhibit a redistribution/transfer of spectral weight, similar to the temperature dependent insulator to metal transition in V O2. The study provides evidence for hole-doping induced electronic structure changes due to the photocarriers in V O2.

Original languageEnglish
Article number201912
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number20
DOIs
Publication statusPublished - Nov 14 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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