Photocarrier-injected electronic structure of v O2/Ti O 2: Nb

Ritsuko Eguchi, S. Shin, A. Fukushima, T. Kiss, T. Shimojima, Yuji Muraoka, Z. Hiroi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We study the effect of photocarrier injection on the electronic structure of V O2 Ti O2: Nb thin films using photoemission spectroscopy. The results indicate that the valence band and core electronic states of V O2 shift systematically to lower binding energy upon photocarrier injection, consistent with doping in a rigid-band picture. The shift in binding energy, and its saturation, follows the known photovoltage behavior. In addition, the V 3d states near EF exhibit a redistribution/transfer of spectral weight, similar to the temperature dependent insulator to metal transition in V O2. The study provides evidence for hole-doping induced electronic structure changes due to the photocarriers in V O2.

Original languageEnglish
Article number201912
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number20
DOIs
Publication statusPublished - Nov 14 2005
Externally publishedYes

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binding energy
injection
electronic structure
shift
photovoltages
photoelectric emission
transition metals
insulators
valence
saturation
thin films
electronics
spectroscopy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Eguchi, R., Shin, S., Fukushima, A., Kiss, T., Shimojima, T., Muraoka, Y., & Hiroi, Z. (2005). Photocarrier-injected electronic structure of v O2/Ti O 2: Nb. Applied Physics Letters, 87(20), 1-3. [201912]. https://doi.org/10.1063/1.2132078

Photocarrier-injected electronic structure of v O2/Ti O 2 : Nb. / Eguchi, Ritsuko; Shin, S.; Fukushima, A.; Kiss, T.; Shimojima, T.; Muraoka, Yuji; Hiroi, Z.

In: Applied Physics Letters, Vol. 87, No. 20, 201912, 14.11.2005, p. 1-3.

Research output: Contribution to journalArticle

Eguchi, R, Shin, S, Fukushima, A, Kiss, T, Shimojima, T, Muraoka, Y & Hiroi, Z 2005, 'Photocarrier-injected electronic structure of v O2/Ti O 2: Nb', Applied Physics Letters, vol. 87, no. 20, 201912, pp. 1-3. https://doi.org/10.1063/1.2132078
Eguchi, Ritsuko ; Shin, S. ; Fukushima, A. ; Kiss, T. ; Shimojima, T. ; Muraoka, Yuji ; Hiroi, Z. / Photocarrier-injected electronic structure of v O2/Ti O 2 : Nb. In: Applied Physics Letters. 2005 ; Vol. 87, No. 20. pp. 1-3.
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