Abstract
We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.
| Original language | English |
|---|---|
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 37 |
| Issue number | 8 SUPPL. B |
| Publication status | Published - Aug 15 1998 |
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Keywords
- Annealing
- Electrical properties
- Electronic excitation
- GaN
- Hydrogen
- Magnesium
- UV irradiation
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films. / Kamiura, Yoichi; Yamashita, Yoshifumi; Nakamura, Shuji.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 8 SUPPL. B, 15.08.1998.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films
AU - Kamiura, Yoichi
AU - Yamashita, Yoshifumi
AU - Nakamura, Shuji
PY - 1998/8/15
Y1 - 1998/8/15
N2 - We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.
AB - We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.
KW - Annealing
KW - Electrical properties
KW - Electronic excitation
KW - GaN
KW - Hydrogen
KW - Magnesium
KW - UV irradiation
UR - http://www.scopus.com/inward/record.url?scp=0032131237&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032131237&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032131237
VL - 37
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 SUPPL. B
ER -