Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films

Yoichi Kamiura, Yoshifumi Yamashita, Shuji Nakamura

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume37
Issue number8 SUPPL. B
Publication statusPublished - Aug 15 1998

Fingerprint

Ultraviolet radiation
Magnesium
magnesium
Chemical activation
Irradiation
activation
Annealing
Hydrogen
electrical resistivity
irradiation
Hole mobility
annealing
hole mobility
hydrogen
Thermodynamic stability
thermal stability
Wavelength
electronics
wavelengths
excitation

Keywords

  • Annealing
  • Electrical properties
  • Electronic excitation
  • GaN
  • Hydrogen
  • Magnesium
  • UV irradiation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films. / Kamiura, Yoichi; Yamashita, Yoshifumi; Nakamura, Shuji.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 37, No. 8 SUPPL. B, 15.08.1998.

Research output: Contribution to journalArticle

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