Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films

Yoichi Kamiura; Yoshifumi Yamashita; Shuji Nakamura

Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films

Yoichi Kamiura, Yoshifumi Yamashita, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

Abstract

We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

Original language	English
Pages (from-to)	L970-L971
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	8 SUPPL. B
Publication status	Published - Aug 15 1998

Keywords

Annealing
Electrical properties
Electronic excitation
GaN
Hydrogen
Magnesium
UV irradiation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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abstract = "We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.",

keywords = "Annealing, Electrical properties, Electronic excitation, GaN, Hydrogen, Magnesium, UV irradiation",

author = "Yoichi Kamiura and Yoshifumi Yamashita and Shuji Nakamura",

year = "1998",

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AU - Kamiura, Yoichi

AU - Yamashita, Yoshifumi

AU - Nakamura, Shuji

PY - 1998/8/15

Y1 - 1998/8/15

N2 - We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

AB - We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

KW - Annealing

KW - Electrical properties

KW - Electronic excitation

KW - GaN

KW - Hydrogen

KW - Magnesium

KW - UV irradiation

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JF - Japanese Journal of Applied Physics, Part 2: Letters

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