Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films

Yoichi Kamiura, Yoshifumi Yamashita, Shuji Nakamura

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.

Original languageEnglish
Pages (from-to)L970-L971
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number8 SUPPL. B
Publication statusPublished - Aug 15 1998


  • Annealing
  • Electrical properties
  • Electronic excitation
  • GaN
  • Hydrogen
  • Magnesium
  • UV irradiation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


Dive into the research topics of 'Photo-enhanced activation of hydrogen-passivated magnesium in P-type GaN films'. Together they form a unique fingerprint.

Cite this