Abstract
We studied the effect of UV-light irradiation on annealing of as-grown Mg-doped GaN films by resistivity and Hall measurements. The annealing temperature where the resistivity reduction due to the electrical activation of hydrogen-passivated Mg occurred with the increase of hole density and the decrease of hole mobility, was reduced from 550 to 450°C by the irradiation of UV light with a peak wavelength around 350 nm. This suggests that electronic excitation reduces the thermal stability of Mg-H complexes in GaN.
Original language | English |
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Pages (from-to) | L970-L971 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 37 |
Issue number | 8 SUPPL. B |
Publication status | Published - Aug 15 1998 |
Keywords
- Annealing
- Electrical properties
- Electronic excitation
- GaN
- Hydrogen
- Magnesium
- UV irradiation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)