Phosphorus diffusion from doped polysilicon through ultra-thin SiO2 films into Si substrates

Yumiko Tsubo, Yukio Komatsu, Kazumasa Saito, Satoru Matsumoto, Yoshiyuki Sato, Ikunao Yamamoto, Yoshifumi Yamashita

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The diffusion of phosphorus into ultra-thin oxides from phosphorus-doped polysilicon sources was studied. The two-boundary diffusion model can be applied to the diffusion of phosphorus in ultra-thin oxides, and the diffusivity and segregation coefficient were obtained based on the model. The dependence of the diffusivity on oxide thickness and drive-in ambients was investigated. The enhanced diffusion, which has been observed for boron diffusion in ultra-thin oxides, was not observed for phosphorus diffusion. For the diffusion in dry O2 and wet O2 ambients, the enhanced diffusion due to high phosphorus concentration in the polysilicon was observed.

Original languageEnglish
Pages (from-to)L955-L957
JournalJapanese Journal of Applied Physics
Issue number10 A
Publication statusPublished - Oct 1 2000

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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