Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2

Toru Kanazawa; Tomohiro Amemiya; Vikrant Upadhyaya; Atsushi Ishikawa; Kenji Tsuruta; Takuo Tanaka; Yasuyuki Miyamoto

doi:10.1109/TNANO.2017.2661403

Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2

Toru Kanazawa, Tomohiro Amemiya, Vikrant Upadhyaya, Atsushi Ishikawa, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Hafnium disulfide (HfS₂) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS₂-based electron devices is not established, and it is required to bring out the superior transport properties of HfS₂. In this report, we have investigated the effects of the atomic layer deposited HfO₂ passivation on the current properties of HfS₂ transistors. HfO₂ passivation of the HfS₂ surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO₂ passivation allows the use of a higher annealing temperature and further improvement of the drain current.

Original language	English
Article number	7837620
Pages (from-to)	582-587
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	16
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2017.2661403
Publication status	Published - Jul 1 2017

Keywords

atomic layer deposition
hafnium disulfide
MOSFETs
transition metal dichalcogenides

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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Kanazawa, T., Amemiya, T., Upadhyaya, V., Ishikawa, A., Tsuruta, K., Tanaka, T., & Miyamoto, Y. (2017). Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2. IEEE Transactions on Nanotechnology, 16(4), 582-587. [7837620]. https://doi.org/10.1109/TNANO.2017.2661403

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abstract = "Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the atomic layer deposited HfO2 passivation on the current properties of HfS2 transistors. HfO2 passivation of the HfS2 surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO2 passivation allows the use of a higher annealing temperature and further improvement of the drain current.",

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AU - Miyamoto, Yasuyuki

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