Abstract
Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the atomic layer deposited HfO2 passivation on the current properties of HfS2 transistors. HfO2 passivation of the HfS2 surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO2 passivation allows the use of a higher annealing temperature and further improvement of the drain current.
| Original language | English |
|---|---|
| Article number | 7837620 |
| Pages (from-to) | 582-587 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 16 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jul 1 2017 |
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Keywords
- atomic layer deposition
- hafnium disulfide
- MOSFETs
- transition metal dichalcogenides
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering
Cite this
Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2. / Kanazawa, Toru; Amemiya, Tomohiro; Upadhyaya, Vikrant; Ishikawa, Atsushi; Tsuruta, Kenji; Tanaka, Takuo; Miyamoto, Yasuyuki.
In: IEEE Transactions on Nanotechnology, Vol. 16, No. 4, 7837620, 01.07.2017, p. 582-587.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2
AU - Kanazawa, Toru
AU - Amemiya, Tomohiro
AU - Upadhyaya, Vikrant
AU - Ishikawa, Atsushi
AU - Tsuruta, Kenji
AU - Tanaka, Takuo
AU - Miyamoto, Yasuyuki
PY - 2017/7/1
Y1 - 2017/7/1
N2 - Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the atomic layer deposited HfO2 passivation on the current properties of HfS2 transistors. HfO2 passivation of the HfS2 surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO2 passivation allows the use of a higher annealing temperature and further improvement of the drain current.
AB - Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the atomic layer deposited HfO2 passivation on the current properties of HfS2 transistors. HfO2 passivation of the HfS2 surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO2 passivation allows the use of a higher annealing temperature and further improvement of the drain current.
KW - atomic layer deposition
KW - hafnium disulfide
KW - MOSFETs
KW - transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85029225442&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85029225442&partnerID=8YFLogxK
U2 - 10.1109/TNANO.2017.2661403
DO - 10.1109/TNANO.2017.2661403
M3 - Article
AN - SCOPUS:85029225442
VL - 16
SP - 582
EP - 587
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
SN - 1536-125X
IS - 4
M1 - 7837620
ER -