TY - JOUR
T1 - Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2
AU - Kanazawa, Toru
AU - Amemiya, Tomohiro
AU - Upadhyaya, Vikrant
AU - Ishikawa, Atsushi
AU - Tsuruta, Kenji
AU - Tanaka, Takuo
AU - Miyamoto, Yasuyuki
N1 - Funding Information:
Manuscript received September 30, 2016; accepted January 21, 2017. Date of publication January 31, 2017; date of current version July 7, 2017. This work was supported by the Japan Society for the Promotion of Science KAKENHI under Grant JP16H00905. The review of this paper was arranged by Associate Editor NANO2016 Guest Editors.
Publisher Copyright:
© 2002-2012 IEEE.
PY - 2017/7
Y1 - 2017/7
N2 - Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the atomic layer deposited HfO2 passivation on the current properties of HfS2 transistors. HfO2 passivation of the HfS2 surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO2 passivation allows the use of a higher annealing temperature and further improvement of the drain current.
AB - Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2-based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the atomic layer deposited HfO2 passivation on the current properties of HfS2 transistors. HfO2 passivation of the HfS2 surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO2 passivation allows the use of a higher annealing temperature and further improvement of the drain current.
KW - MOSFETs
KW - atomic layer deposition
KW - hafnium disulfide
KW - transition metal dichalcogenides
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U2 - 10.1109/TNANO.2017.2661403
DO - 10.1109/TNANO.2017.2661403
M3 - Article
AN - SCOPUS:85029225442
VL - 16
SP - 582
EP - 587
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
SN - 1536-125X
IS - 4
M1 - 7837620
ER -