Parasitic Inductance Design for Preventing Oscillatory False Triggering of Parallel-Connected GaN-FETs

Yusuke Hatakenaka, Kazuhiro Umetani, Masataka Ishihara, Eiji Hiraki, Hiroshi Tadano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN-FETs are recently spreading in high-power switching converters, where GaN-FETs are commonly parallel connected to switch the large current. However, the parallel-connected GaN-FETs often suffer from false triggering because the parallel connection incorporates multiple LC resonators of the parasitic capacitance of GaN-FETs and the parasitic inductance of the printed circuit board, which can be easily excited by the switching noise and fluctuate the gate voltage. Particularly, GaN-FETs are susceptible to the self-sustaining repetition of the false triggering, i.e. the oscillatory false triggering, which must be prevented in industrial products. For prevention of this phenomenon in the case of a single GaN-FET, the preceding studies have proposed the design instruction of the parasitic inductance. However, few insights are available for the parallel-connected GaN-FETs. The purpose of this paper is to elucidate the design instruction to prevent the oscillatory false triggering for parallel-connected GaN-FETs through analyzing the equivalent circuit model of this phenomenon. The result revealed that parallel-connected GaN-FETs need the design instruction slightly modified from that for a single GaN-FET. The appropriateness of this modified instruction was verified by the simulation, suggesting the feasibility of this instruction for applying the parallel-connected GaN-FETs in high-power switching converters.

Original languageEnglish
Title of host publicationIECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society
PublisherIEEE Computer Society
ISBN (Electronic)9781665435543
DOIs
Publication statusPublished - Oct 13 2021
Event47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021 - Toronto, Canada
Duration: Oct 13 2021Oct 16 2021

Publication series

NameIECON Proceedings (Industrial Electronics Conference)
Volume2021-October

Conference

Conference47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021
Country/TerritoryCanada
CityToronto
Period10/13/2110/16/21

Keywords

  • GaN-FET
  • common-source inductance
  • false triggering
  • oscillatory false triggering
  • parasitic inductance

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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