Oxidation properties of hydrogen-terminated Si(001) surfaces following use of a hyperthermal broad atomic oxygen beam at low temperatures

Masahito Tagawa, Kumiko Yokota, Nobuo Ohmae, Hiroshi Kinoshita, Masataka Umeno

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The oxidation properties of an H-terminated Si(001) surface following the use of a hyperthermal broad atomic oxygen beam have been studied at low temperatures. Effects of sample temperature, flux and energy of the impinging atomic oxygen on the oxidation of silicon were investigated by X-ray photoelectron spectroscopy. It was confirmed that oxide growth at the surface was achieved even at room temperature and the oxide thickness reached a terminal thickness of a few nanometers depending upon the oxidation conditions. The oxidation process was divided into two stages: the fast oxidation stage and the subsequent slow oxidation stage. It was also confirmed that the reaction yield of atomic oxygen with Si increased with increasing translational energy. The characteristic feature of beam oxidation was explained by the effect of energy accommodation from the impinging oxygen atom to the surface silicon atom.

Original languageEnglish
Pages (from-to)6152-6156
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number10
DOIs
Publication statusPublished - Oct 2001

Keywords

  • Atomic oxygen
  • Beam oxidation
  • Energy accommodation
  • Low-temperature oxidation
  • Neutral beam
  • Oxidation
  • Semiconductor process
  • Silicon
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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