Abstract
The oxidation properties of an H-terminated Si(001) surface following the use of a hyperthermal broad atomic oxygen beam have been studied at low temperatures. Effects of sample temperature, flux and energy of the impinging atomic oxygen on the oxidation of silicon were investigated by X-ray photoelectron spectroscopy. It was confirmed that oxide growth at the surface was achieved even at room temperature and the oxide thickness reached a terminal thickness of a few nanometers depending upon the oxidation conditions. The oxidation process was divided into two stages: the fast oxidation stage and the subsequent slow oxidation stage. It was also confirmed that the reaction yield of atomic oxygen with Si increased with increasing translational energy. The characteristic feature of beam oxidation was explained by the effect of energy accommodation from the impinging oxygen atom to the surface silicon atom.
| Original language | English |
|---|---|
| Pages (from-to) | 6152-6156 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 2001 |
Keywords
- Atomic oxygen
- Beam oxidation
- Energy accommodation
- Low-temperature oxidation
- Neutral beam
- Oxidation
- Semiconductor process
- Silicon
- XPS
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)