Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C 60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V-1 s-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)