Output properties of C60 field-effect transistor device with Eu source/drain electrodes

Kenji Ochi; Takayuki Nagano; Toshio Ohta; Ryo Nouchi; Yoshihiro Kubozono; Yukitaka Matsuoka; Eiji Shikoh; Akihiko Fujiwara

doi:10.1063/1.2337990

Output properties of C₆₀ field-effect transistor device with Eu source/drain electrodes

Kenji Ochi, Takayuki Nagano, Toshio Ohta, Ryo Nouchi, Yoshihiro Kubozono, Yukitaka Matsuoka, Eiji Shikoh, Akihiko Fujiwara

Research Institute for Interdisciplinary Science

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Field-effect transistor (FET) device with thin films of C₆₀ has been fabricated with Eu electrodes exhibiting small work function. The C ₆₀ FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm² V^-1 s^-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C₆₀.

Original language	English
Article number	083511
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2337990
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2337990

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@article{aadbcc3b73a44e1da2b1675bfa33067c,

title = "Output properties of C60 field-effect transistor device with Eu source/drain electrodes",

abstract = "Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C 60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V-1 s-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.",

author = "Kenji Ochi and Takayuki Nagano and Toshio Ohta and Ryo Nouchi and Yoshihiro Kubozono and Yukitaka Matsuoka and Eiji Shikoh and Akihiko Fujiwara",

year = "2006",

doi = "10.1063/1.2337990",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Output properties of C60 field-effect transistor device with Eu source/drain electrodes

AU - Ochi, Kenji

AU - Nagano, Takayuki

AU - Ohta, Toshio

AU - Nouchi, Ryo

AU - Kubozono, Yoshihiro

AU - Matsuoka, Yukitaka

AU - Shikoh, Eiji

AU - Fujiwara, Akihiko

PY - 2006

Y1 - 2006

N2 - Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C 60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V-1 s-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

AB - Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C 60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V-1 s-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

UR - http://www.scopus.com/inward/record.url?scp=33747855475&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33747855475&partnerID=8YFLogxK

U2 - 10.1063/1.2337990

DO - 10.1063/1.2337990

M3 - Article

AN - SCOPUS:33747855475

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

M1 - 083511

ER -