Output properties of C60 field-effect transistor device with Eu source/drain electrodes

Kenji Ochi, Takayuki Nagano, Toshio Ohta, Ryo Nouchi, Yoshihiro Kubozono, Yukitaka Matsuoka, Eiji Shikoh, Akihiko Fujiwara

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


Field-effect transistor (FET) device with thin films of C60 has been fabricated with Eu electrodes exhibiting small work function. The C 60 FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm2 V-1 s-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C60.

Original languageEnglish
Article number083511
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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