Output properties of C60 field-effect transistor device with Eu source/drain electrodes

Kenji Ochi; Takayuki Nagano; Toshio Ohta; Ryo Nouchi; Yoshihiro Kubozono; Yukitaka Matsuoka; Eiji Shikoh; Akihiko Fujiwara

doi:10.1063/1.2337990

Output properties of C₆₀ field-effect transistor device with Eu source/drain electrodes

Kenji Ochi, Takayuki Nagano, Toshio Ohta, Ryo Nouchi, Yoshihiro Kubozono, Yukitaka Matsuoka, Eiji Shikoh, Akihiko Fujiwara

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Field-effect transistor (FET) device with thin films of C₆₀ has been fabricated with Eu electrodes exhibiting small work function. The C ₆₀ FET device shows n-channel FET properties with high field-effect mobility, 0.50 cm² V^-1 s^-1. Furthermore, nonvanishing drain current, i.e., normally on, is observed in this FET device. This originates from small energy barrier for electron from Eu source electrode to lowest unoccupied molecular orbital of C₆₀.

Original language	English
Article number	083511
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2337990
Publication status	Published - Aug 31 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ochi, K., Nagano, T., Ohta, T., Nouchi, R., Kubozono, Y., Matsuoka, Y., Shikoh, E., & Fujiwara, A. (2006). Output properties of C₆₀ field-effect transistor device with Eu source/drain electrodes. Applied Physics Letters, 89(8), [083511]. https://doi.org/10.1063/1.2337990

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AU - Matsuoka, Yukitaka

AU - Shikoh, Eiji

AU - Fujiwara, Akihiko

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